IXST35N120B IXYS, IXST35N120B Datasheet - Page 2
IXST35N120B
Manufacturer Part Number
IXST35N120B
Description
IGBT 1200V 70A SCSOA TO-268
Manufacturer
IXYS
Datasheet
1.IXSH35N120B.pdf
(2 pages)
Specifications of IXST35N120B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
35
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.6
Tfi, Typ, Igbt, (ns)
180
Eoff, Typ, Tj=125°c, Igbt, (mj)
5
Rthjc, Max, Igbt, (k/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXST35N120B
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
Test Conditions
Inductive load, T
Inductive load, T
C
C
C
C
CE
G
CE
G
C90
C90
C90
C90
G
CES
GE
GE
GE
CE
CE
GE
J
J
= 25 C
= 125 C
CES
CE
J
CES
CE
min.
4,835,592
4,850,072
Characteristic Values
typ.
CES
4,881,106
4,931,844
max.
5,017,508
5,034,796
J
TO-247 AD Outline (IXSH)
5,049,961
TO-268 Outline (IXST)
5,063,307
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
2
1
2
1
IXSH 35N120B
IXST 35N120B
13.80
15.85
18.70
5,187,117
5,237,481
1.15
13.3
2.40
1.20
1.00
3.80
Min.
4.9
2.7
.02
1.9
Millimeter
5.45 BSC
0.25 BSC
.4
14.00
16.05
19.10
Max.
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
5,486,715
5,381,025
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min.
.75
Inches
.215 BSC
.010 BSC
6,306,728B1
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83