IXER35N120D1 IXYS, IXER35N120D1 Datasheet
IXER35N120D1
Manufacturer Part Number
IXER35N120D1
Description
IGBT W/DIOD TO-247 NPT3 1200V50A
Manufacturer
IXYS
Datasheet
1.IXER35N120D1.pdf
(4 pages)
Specifications of IXER35N120D1
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 35A
Current - Collector (ic) (max)
50A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.6
Rthjc, Max, Igbt, (°c/w)
0.60
If, Tc=90°c, Diode, (a)
25
Rthjc, Max, Diode, (k/w)
1.2
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1370333
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXER35N120D1
Manufacturer:
HITACHI
Quantity:
20 000
NPT
with Diode
in ISOPLUS 247
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBT
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
thJH
3
IGBT
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 35 A; V
= 1 mA; V
D-68623 Lampertheim
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900V; V
= V
= 25 V; V
= ± 15 V; R
= 0 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
GE
TM
GE
GE
= 15 V; T
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= ± 15 V; R
= 39 Ω; T
= 15 V; I
C
CE
G
= 35 A
= 39 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
VJ
= 125°C
= 35 A
G
= 125°C
= 39 Ω; T
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
Characteristic Values
Maximum Ratings
440
150
typ.
2.2
2.6
0.4
5.4
2.6
1.2
85
50
50
1200
± 20
V
2
200
50
32
CES
10
50
G
max.
200
0.4 mA
2.8
6.5
0.6 K/W
K/W
E
mA
C
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
I
V
V
ISOPLUS 247
G = Gate
*Patent pending
Features
• NPT
• HiPerFRED
• ISOPLUS 247
Applications
• single switches
• choppers with complementary free
• phaselegs, H bridges, three phase
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- isolated back surface
- low coupling capacity between pins
- high reliability
- industry standard outline
wheeling diodes
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
CES
CE(sat) typ.
performance in resonant circuits
and heatsink
easy paralleling
3
IGBT
E153432
IXER 35N120D1
G
C = Collector
TM
C
TM
E
TM
= 50 A
= 1200 V
= 2.2 V
diode
package
Isolated Backside*
E = Emitter
1 - 4
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IXER35N120D1 Summary of contents
Page 1
... off MHz ies 600 Gon thJC R thJH © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 G Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... ISOL ISOL F mounting force with clip C Symbol Conditions C coupling capacity between shorted p pins and mounting tab in the case Weight © 2003 IXYS All rights reserved Maximum Ratings 48 25 Characteristic Values min. typ. max. 2.5 2.9 1 125° 1 ...
Page 3
... 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 25° 600 0.0001 160 200 IXER 35N120D1 120 100 Fig. 2 Typ. output characteristics 125°C ...
Page 4
... T =125° 600 V I =35A F R 56Ω 50 75Ω 40 75Ω 56Ω 200 400 600 800 1000 -di /dt [A/µs] F Fig. 11 Typ. turn off characteristics of free wheeling diode © 2003 IXYS All rights reserved 100 off 600 ± Ω 125° ...