IRGP4063DPBF International Rectifier, IRGP4063DPBF Datasheet

IGBT PDP N-CH 600V 96A TO-247AC

IRGP4063DPBF

Manufacturer Part Number
IRGP4063DPBF
Description
IGBT PDP N-CH 600V 96A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGP4063DPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.14V @ 15V, 48A
Current - Collector (ic) (max)
96A
Power - Max
330W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
96A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
96A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
330W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRGP4063DPBF
Manufacturer:
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Quantity:
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Part Number:
IRGP4063DPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRGP4063DPBF
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Part Number:
IRGP4063DPBF
Quantity:
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Company:
Part Number:
IRGP4063DPBF
Quantity:
6 000
Features
• Low V
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (I
• Positive V
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
1
V
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
CM
LM
F
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
Low V
@ T
@ T
@ T
@ T
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
CE (ON)
and Low Switching losses
Trench IGBT Technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature co-efficient
Parameter
Parameter
e
LM
)
G
n-channel
Gate
G
C
E
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
IRGP4063DPbF
C
10 lbf·in (1.1 N·m)
Collector
TO-247AC
-55 to +175
C
t
Max.
SC
Typ.
0.24
600
144
192
192
±20
±30
330
170
–––
–––
96
48
96
48
40
I
V
G
C
≥ 5μs, T
C
CE(on)
= 48A, T
E
V
CES
Emitter
Max.
typ. = 1.65V
0.45
0.92
–––
–––
J(max)
= 600V
E
C
= 100°C
www.irf.com
= 175°C
Units
Units
°C/W
04/01/11
°C
W
V
A
V

Related parts for IRGP4063DPBF

IRGP4063DPBF Summary of contents

Page 1

... R (Diode) Thermal Resistance Junction-to-Case-(each Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel G Gate Parameter e Parameter IRGP4063DPbF V = 600V CES I = 48A 100° ≥ 5μ 175°C SC J(max) V typ. = 1.65V CE(on TO-247AC C ...

Page 2

... IRGP4063DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔTJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... DC 100 1000 =15V 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. Fig Typ. IGBT Output Characteristics IRGP4063DPbF 350 300 250 200 150 100 100 125 150 175 200 T C (°C) Fig Power Dissipation vs. Case Temperature 100 ...

Page 4

... IRGP4063DPbF 200 18V 180 VGE = 15V 160 VGE = 12V VGE = 10V 140 VGE = 8.0V 120 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 80μ (V) Fig Typical -40° (V) Fig Typical 175° Fig Typ. Diode Forward Characteristics 24A 48A 96A 24A ...

Page 5

... J www.irf.com E ON 100 150 C = 10Ω 15V T = 175° 200μ OFF 100 125 175° 200μ 48A 15V 100 vs IRGP4063DPbF 1000 td OFF 100 (A) Fig Typ. Switching Time vs 400V 10Ω 1000 td OFF 100 100 R G (Ω) Fig Typ. Switching Time vs 400V 48A ...

Page 6

... IRGP4063DPbF 200 400 di F /dt (A/μs) Fig Typ. Diode 400V 15V 48A 900 800 10Ω 700 22Ω 600 500 400 47Ω 300 100Ω 200 100 (A) Fig Typ. Diode 175°C J 10000 1000 100 (V) Fig Typ. Capacitance vs 0V 1MHz GE 6 600 ...

Page 7

... J τ J τ τ τ 1 τ τ τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) IRGP4063DPbF Ri (°C/W) τi (sec 0.0872 0.000114 τ C τ 0.1599 0.001520 τ 3 0.2020 0.020330 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0 (°C/W) τi (sec) 3 0.2774 0.000908 τ ...

Page 8

... IRGP4063DPbF DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) 4X DUT Fig.C.T.3 - S.C. SOA Circuit R = VCC ICM DUT Rg Fig.C.T.5 - Resistive Load Circuit VCC diode clamp / DC VCC R SH VCC G force DUT VCC Rg Fig.C.T.2 - RBSOA Circuit DUT L -5V DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit C force ...

Page 9

... Fig. WF2 - Typ. Turn-on Loss Waveform 600 500 400 300 200 10% 100 Peak -100 0.25 -5.00 IRGP4063DPbF 140 120 tr 100 TEST 80 CURRENT 60 90% test 10% test CE current -20 6.40 6.60 6.80 7.00 Time (µ 175°C using Fig. CT.4 ...

Page 10

... IRGP4063DPbF TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 10 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...

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