IXSX50N60BU1 IXYS, IXSX50N60BU1 Datasheet
IXSX50N60BU1
Specifications of IXSX50N60BU1
Related parts for IXSX50N60BU1
IXSX50N60BU1 Summary of contents
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... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSK 50N60BU1 IXSX 50N60BU1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 200 = 100 0.8 V CES = 125°C 10 ...
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... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. /dt = 480 A/ 125°C 175 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSK 50N60BU1 IXSX 50N60BU1 TM PLUS247 (IXSX) max ...
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... Volts CE Figure 3. Saturation Voltage Characteristics 100 V = 10V 125° Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved 13V 11V 13V 11V 10000 1000 100 = 25° IXSK 50N60BU1 IXSX 50N60BU1 160 T = 25° 15V GE 120 13V 80 11V 40 9V ...
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... Q - nanocoulombs g Figure 9. Gate Charge 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 24 E (ON (OFF 100 and OFF C 600 100 10 1 0.1 125 150 175 Figure 10. Turn-off Safe Operating Area D = Duty Cycle 0 ...
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... Fig. 12 Forward current versus voltage drop. Fig. 15. Dynamic parameters versus junction temperature. Fig. 18 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved Fig. 13 Recovery charge versus -di /dt. F Fig. 16 Recovery time versus -di /dt. F IXSK 50N60BU1 IXSX 50N60BU1 Fig. 14 Peak reverse current versus -di /dt ...
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... IXYS All rights reserved IXSK 50N60BU1 IXSX 50N60BU1 ...