IXBT16N170A IXYS, IXBT16N170A Datasheet
IXBT16N170A
Manufacturer Part Number
IXBT16N170A
Description
TRANSISTOR NON 10A 1.7KV TO-268
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet
1.IXBT16N170A.pdf
(2 pages)
Specifications of IXBT16N170A
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
6V @ 15V, 10A
Current - Collector (ic) (max)
16A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Collector- Emitter Voltage Vceo Max
1700 V
Maximum Gate Emitter Voltage
20 V
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
16 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Vces, (v)
1700
Ic25, Tc=25°c, (a)
16
Ic90, Tc=90°c, (a)
10
Vce(sat), Typ, Tj=25°c, (v)
4.7
Tf Typ, Tj=25°c, (ns)
50
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.83
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q2441898
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXBT16N170A
Manufacturer:
IXYS
Quantity:
18 000
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
GE(th)
CE(sat)
CES
GES
GEM
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
Mounting torque (M3) (TO-247)
Test Conditions
I
I
V
V
V
I
Note 2
C
C
C
J
J
C
C
C
C
GE
GE
CE
GE
CE
G
= 33 W non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
TM
= 15 V, T
= 15 V, V
= 250 mA, V
= 250 mA, V
= 0.8 V
= 0 V; Note 1
= 0 V, V
= I
Monolithic
C90
, V
CES
GE
GE
VJ
CES
= 15 V
= ±20 V
= 125°C, R
GE
CE
= 1200V, T
= 0 V
= V
GE
GE
TO-247
TO-268
= 1 MW
G
= 33 W
T
T
J
J
J
= 125°C
(T
= 125°C
= 125°C
J
Advanced Technical Information
= 25°C, unless otherwise specified)
IXBH 16N170A
IXBT 16N170A
1700
min.
I
V
2.5
CM
CES
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
=
=
typ.
5.0
1.13/10 Nm/lb.in.
1700
1700
1350
300
±20
±30
260
150
150
16
10
40
40
10
max.
6
4
±100
5.5
1.5
6.0
50
mA
mA
nA
°C
°C
°C
°C
°C
ms
W
V
V
V
V
A
A
A
A
V
V
V
V
V
g
g
TO-268
(IXBT)
V
I
V
t
TO-247 AD (IXBH)
Features
• Monolithic fast reverse diode
• High Blocking Voltage
• JEDEC TO-268 surface mount and
• Low switching losses
• High current handling capability
• MOS Gate turn-on
• Molding epoxies meet UL 94 V-0
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• Capacitor discharge circuits
Advantages
• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
G = Gate,
E = Emitter,
C25
fi(typ)
JEDEC TO-247 AD packages
- drive simplicity
flammability classification
power supplies
(isolated mounting screw hole)
CES
CE(sat)
G
= 1700 V
=
=
=
C
G
E
C = Collector,
TAB = Collector
6.0 V
E
16 A
50 ns
98707 (02/23/00)
C (TAB)
1 - 2
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IXBT16N170A Summary of contents
Page 1
... V CES CE CES Note ± GES CE(sat) C C90 GE Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXBH 16N170A IXBT 16N170A Maximum Ratings 1700 = 1 MW 1700 GE ±20 ± 1350 CES = 125° ...
Page 2
... CES 2.6 G 0.25 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 360 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXBH 16N170A IXBT 16N170A TO-247 AD Outline ...