IXSX40N60BD1 IXYS, IXSX40N60BD1 Datasheet
IXSX40N60BD1
Manufacturer Part Number
IXSX40N60BD1
Description
IGBT 600V FRD SCSOA PLUS 247
Manufacturer
IXYS
Datasheet
1.IXSX40N60BD1.pdf
(2 pages)
Specifications of IXSX40N60BD1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
280W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Igbt, (ns)
120
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.8
Rthjc, Max, Igbt, (k/w)
0.48
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
© 2000 IXYS All rights reserved
IGBT with Diode
PLUS247
Short Circuit SOA Capability
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
Mounting torque
Test Conditions
I
I
V
V
V
I
C
C
C
TM
C
C
C
C
J
J
GE
GE
CE
GE
CE
G
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, limited by leads
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 1 mA, V
= 4 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
package
C90
, V
GE
GE
VJ
CE
CES
GE
CE
= 125°C, R
= 15 V
= 360 V, T
= ±20 V
= V
= 0 V
GE
(TO-264)
TO-264
PLUS247
GE
= 1 MW
J
G
= 125°C
= 22 W
T
T
J
J
(T
= 25°C
= 150°C
J
= 25°C, unless otherwise specified)
IXSK 40N60BD1
IXSX 40N60BD1
min.
600
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
0.9/6 Nm/lb.in.
= 80
600
600
±20
±30
150
280
150
300
CES
10
75
40
10
5
max.
±100
650
2.2
7
5
mA
mA
nA
°C
°C
°C
°C
ms
W
V
V
V
V
A
A
A
A
V
V
V
g
g
G = Gate,
E = Emitter
PLUS 247
(IXSX)
TO-264 AA
(IXSK)
Features
• International standard packages
• Guaranteed Short Circuit SOA
• Medium frequency IGBT and anti-
• Latest generation HDMOS
• Low V
• MOS Gate turn-on
• Fast Recovery,low leakage Epitaxial
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• PLUS 247
• Space savings (two devices in one
• Reduces assembly time and cost
V
I
V
t
capability
parallel FRED in one package
- for minimum on-state conduction
- drive simplicity
Diode
- soft recovery with low I
package)
power supplies
mounting
C25
fi(typ)
losses
CES
CE(sat)
CE(sat)
G
TM
G
C
TM
C
package for clip or spring
E
= 600 V
= 75 A
= 2.2 V
E
= 120 ns
C = Collector,
RM
TM
98573A (7/00)
process
C (TAB)
1 - 2
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IXSX40N60BD1 Summary of contents
Page 1
... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSK 40N60BD1 IXSX 40N60BD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 150 = 0.8 V CES = 125° 280 -55 ...
Page 2
... T or CES J 2.6 0.15 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. /dt = 100 A/ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSK 40N60BD1 IXSX 40N60BD1 TO-264 AA Outline max Dim ...