IRG4PH50S-EPBF International Rectifier, IRG4PH50S-EPBF Datasheet

IGBT 1200V 57A 1KHZ TO-247AD

IRG4PH50S-EPBF

Manufacturer Part Number
IRG4PH50S-EPBF
Description
IGBT 1200V 57A 1KHZ TO-247AD
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH50S-EPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 33A
Current - Collector (ic) (max)
57A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
I
Features
Benefits
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
Absolute Maximum Ratings
Thermal Resistance
NSULATED GATE BIPOLAR TRANSISTOR
C
C
CM
LM
www.irf.com
Generation 3
parameter distribution and higher efficiency than
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
Standard: Optimized for minimum saturation
Generation 4 IGBT design provides tighter
Industry standard TO-247AC package
CES
GE
ARV
D
D
J
STG
Lead-Free
industry-standard Generation 3 IR IGBT's
θJC
θCS
θJA
@ T
@ T
voltage and low operating frequencies ( < 1kHz)
@ T
@ T
C
C
C
C
= 25°C
= 100°C
=25°
=100°
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
d
e
IRG4PH50S-EPbF
G
n-channel
Min.
300 (0.063 in. (1.6mm) from case)
C
E
10 lbf·in (1.1 N·m)
IRG4PH50S-EPbF
-55 to + 150
6.0(0.21)
C
1200
TO-247AD
± 20
± 30
114
114
270
200
57
33
80
Typ.
0.24
Standard Speed IGBT
Max.
G C
V
@V
CE(on) typ.
V
E
GE
CES
Max.
0.64
= 15V, I
40
=1200V
PD -96225
= 1.47V
C
Units
Units
g (oz)
= 33A
°C/W
02/09/09
mJ
°C
W
V
A
V
1

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IRG4PH50S-EPBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH50S-EPbF Standard Speed IGBT n-channel C TO-247AD IRG4PH50S-EPbF Max. 1200 57 33 114 d 114 ± 20 ± 270 200 80 - 150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. ...

Page 2

... IRG4PH50S-EPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) DV /DT Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe CES I Gate-to-Emitter Leakage Current GES ...

Page 3

... T = 150 80µs PULSE WIDTH 1 0.0 1.0 2.0 3 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4PH50S-EPbF For both: Duty cycle: 50 125° 90°C sink Gate drive as specified Power Dissipation = 40W 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100 ° ...

Page 4

... IRG4PH50S-EPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V PULSE WIDTH 2.0 1.5 1.0 125 ...

Page 5

... CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 25 960V 15V GE ° 33A C 24.0 23.0 22.0 21 Gate Resistance (Ohm) ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PH50S-EPbF SHORTED 100 0 Fig Typical Gate Charge vs. 1000 15V 960V CC 100 -60 -40 -20 Fig Typical Switching Losses vs. = 400V = 33A ...

Page 6

... IRG4PH50S-EPbF 120 Ω 5Ohm 150 C ° 960V CC 100 V = 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 10 SAFE OPERATING AREA Fig Reverse Bias SOA = 20V o = 125 C 10 100 1000 V , Collector-to-Emitter Voltage (V) CE www.irf.com 10000 ...

Page 7

... L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. - Driver* 50V 1000V Ã www.irf.com IRG4PH50S-EPbF D.U. D.U. 480µF 960V - - - 7 ...

Page 8

... IRG4PH50S-EPbF TO-247AD Package Outline ( TO-247AD Part Marking Information TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Dimensions are shown in millimeters (inches)) "$C $% $& Data and specifications subject to change without notice. ...

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