IRG4PC50UDPBF International Rectifier, IRG4PC50UDPBF Datasheet
IRG4PC50UDPBF
Specifications of IRG4PC50UDPBF
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IRG4PC50UDPBF Summary of contents
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... Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PC50UDPbF G TM ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD -95185 UltraFast CoPack IGBT 600V CES = 1 ...
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... IRG4PC50UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ---- GE(th Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Load Current vs. Frequency ° ° µ 0 lle itte lta Fig Typical Output Characteristics www.irf.com IRG4PC50UDPbF 1 f, Freq uen cy (kH z) (Load Current = I of fundamental) RMS 0° Fig Typical Transfer Characteristics ycl ° °C sin rive a s spe cifi ed ...
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... IRG4PC50UDPbF ase Tem perature (°C) C Fig Maximum Collector Current vs. Temperature Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 µ 2.0 1.5 1 -60 -40 - tio (°C ) Case Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ura tio ote www.irf.com ...
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... oes res lle itte lta Fig Typical Capacitance vs. Collector-to-Emitter Voltage 3 ° 2.5 2.0 1.5 1 Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PC50UDPbF Fig Typical Gate Charge vs 0 -60 -40 Ω ) Fig Typical Switching Losses vs. = 400V = 27A Total Gate Charge (nC) g Gate-to-Emitter Voltage ...
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... IRG4PC50UDPbF 8 Ω ° 6.0 4.0 2.0 0 lle c to r-to-E m itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.6 1.0 1.4 1.8 2 lta 125 ° TIN Collecto r-to-E m itter V oltage ( Fig Turn-Off SOA 2 ...
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... ° ° 50A 25A 10A /dt - (A/µs) f Fig Typical Reverse Recovery vs ° ° /µ Fig Typical Stored Charge vs. di www.irf.com IRG4PC50UDPbF Fig Typical Recovery Current vs /dt Fig Typical ° ° /µ ° ° / /µs) f /dt vs. di /dt (rec / ...
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... IRG4PC50UDPbF Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - µ S ...
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... Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com IRG4PC50UDPbF Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current Test Circuit 480V @25°C C Test Circuit 9 ...
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... IRG4PC50UDPbF Notes: Q Repetitive rating 20V; pulse width limited by maximum junction temperature GE (figure 20 80%( 20V 10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...