IXSH50N60B IXYS, IXSH50N60B Datasheet
IXSH50N60B
Manufacturer Part Number
IXSH50N60B
Description
IGBT 600V 75A SCSOA TO-247
Manufacturer
IXYS
Datasheet
1.IXSH50N60B.pdf
(4 pages)
Specifications of IXSH50N60B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 50A
Current - Collector (ic) (max)
75A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
150
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.3
Rthjc, Max, Igbt, (k/w)
0.5
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSH50N60B
Manufacturer:
IXYS
Quantity:
15 500
mêÉäáãáå~êó=Ç~í~=ëÜÉÉí
IGBT High Speed
Short Circuit SOA Capability
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
«=NVVV=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ
CM
CES
GES
C25
C90
SC
J
JM
stg
GE(th)
CE(sat)
CGR
GEM
C
CES
GES
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 H
V
R
T
Mounting torque
C
C
C
GE
J
J
C
C
C
GE
GE
C
CE
CE
G
= 22
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, limited by leads
= 90 C
= 25 C, 1 ms
= 15 V, T
= 15 V, V
= 25 C
= 250 A, V
= 4 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
; V
non repetitive
GE
GE
VJ
CE
CES
CE
= 15 V
= 20 V
= 125 C, R
= 360 V, T
GE
= V
= 0 V
GE
GE
= 1 M
J
G
= 125 C
= 22
T
T
(T
J
J
J
= 25 C
= 125 C
= 25 C, unless otherwise specified)
TO-247
TO-247 SMD
IXSH 50N60B
min.
600
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
1.13/10 Nm/lb.in.
typ.
2.2
= 100
600
600
200
250
150
300
20
30
75
50
CES
10
4
6
max.
200
100
2.5
8
1
mA
nA
V
W
A
C
C
C
C
V
V
V
V
V
V
A
A
A
A
g
g
s
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
Advantages
V
I
V
`OR
International standard package
JEDEC TO-247 AD, and
TO-247 SMD for surface mount
Guaranteed Short Circuit SOA
capability
High frequency IGBT
Latest generation HDMOS
Low V
- for minimum on-state conduction
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
`bp
`bEë~íF
losses
CE(sat)
G
C
= 600 V
=
= 2.5 V
E
C = Collector,
TAB = Collector
75 A
VTROQ_= EQLVVF
TM
process
`=Eq^_F
Related parts for IXSH50N60B
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXSH50N60B Summary of contents
Page 1
IGBT High Speed Short Circuit SOA Capability mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions 150 C CES 150 C; R CGR J V Continuous GES V Transient GEM I T ...
Page 2
... CE CES G t d(off) Remarks: Switching times may increase t for V (Clamp) > 0.8 • increased off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values ( unless otherwise specified) J min. typ. max 160 3850 440 50 167 = 0 CES 88 70 ...
Page 3
V = 15V T = 25° Volts CE Figure 1. Saturation Voltage Characteristics 100 V = 15V 125° ...
Page 4
... 100 Q - nanocoulombs g Figure 9. Gate Charge 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions (ON (OFF 100 and OFF C 600 100 10 1 0.1 ...