IXGH25N160 IXYS, IXGH25N160 Datasheet - Page 4

• Manufacturer Part Number: IXGH25N160
• Description: IGBT 1600V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH25N160

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1600V
• Vce(on) (max) @ Vge, Ic: 4.7V @ 20V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.6kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): 20
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1200
1100
1000
500
460
420
380
340
300
260
220
180
140
900
800
700
600
500
400
300
200
100
27
24
21
18
15
12
9
6
3
0
Fig. 11. Resistive Turn-Off Switching Times
50
25
0
t
R
V
f
G
CE
R
V
V
35
20
= 10 Ω , V
60
G
GE
CE
= 1200V
Fig. 9. Resistive Turn-On Rise Time
= 10 Ω
= 1200V
= 15V
vs. Junction Temperature
45
40
70
t
T
d(off)
J
GE
Fig. 7. Transconductance
T
- Degrees Centigrade
J
55
vs. Collector Current
- - - -
= 15V
= - 40ºC
60
80
125ºC
25ºC
65
I
I
C
C
80
90
T
- Amperes
- Amperes
J
75
= 125ºC
I
100
100
C
= 100A, 150A
85
120
110
T
95
J
= 25ºC
105 115 125
140
120
I
C
160
130
= 50A
180
140
125
120
115
110
105
100
95
90
85
80
75
70
200
150
1140
700
650
600
550
500
450
400
350
300
250
200
480
440
400
360
320
280
240
200
160
980
820
660
500
340
180
Fig. 12. Resistive Turn-Off Switching Times
10
25
50
Fig. 10. Resistive Turn-On Switching Times
t
T
V
r
J
CE
R
V
V
= 125ºC, V
60
G
GE
CE
35
15
= 1200V
= 10 Ω
Fig. 8. Resistive Turn-On Rise Time
= 1200V
= 15V
70
45
20
t
vs. Collector Current
d(on)
vs. Junction Temperature
vs. Gate Resistance
GE
80
55
T
= 15V
- - - -
I
T
C
J
J
25
R
- Degrees Centigrade
= 25ºC
90
- Amperes
G
- Ohms
65
100 110 120 130 140 150
30
t
R
V
f
G
CE
75
= 10 Ω , V
= 1200V
I
I
35
C
C
I
C
= 150A
= 100A
85
I
= 50A
C
t
d(off)
= 50A, 100A
GE
IXGH 25N160
IXGT 25N160
40
T
= 15V
95
- - - -
J
= 25ºC
I
C
45
= 150A
105
115
50
124
116
108
100
92
84
76
82
78
74
70
66
62
58
54
50
46
42
125