IXEH40N120 IXYS, IXEH40N120 Datasheet - Page 3

• Manufacturer Part Number: IXEH40N120
• Description: IGBT NPT3 SGL 1200V 60A TO-247AD
• Manufacturer: IXYS

Specifications of IXEH40N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 40A
• Current - Collector (ic) (max): 60A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Igbt, (ns): 50
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.0
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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I
V
I
C
C
GE
120
100
120
100
80
60
40
20
20
15
10
A
A
80
60
40
20
V
0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5
0
0
0
4
T
VJ
V
CE
= 125°C
1
= 20 V
6
40
Typ. turn on gate charge
2
8
V
GE
80
= 17 V
3
T
VJ
10
= 25°C
4
120
V
V
CE
GE
12
5
V
I
C
Q
CE
G
160
T
= 600 V
= 35 A
VJ
14
= 25°C
6
nC
15 V
13 V
11 V
V
9 V
V
200
7
16
I
Z
C
Fig. 6
thJC
0.001
Fig. 2 Typ. output characteristics
Fig. 4
I
F
0.01
120
100
K/W
0.1
A
10
0.00001 0.0001
80
60
40
20
90
75
60
45
30
15
A
0
1
0
0
0
Typ. forward characteristics of
free wheeling diode
Typ. transient thermal impedance
1
T
VJ
1
= 125°C
2
0.001
single pulse
3
IXEH 40N120
IXEH 40N120D1
0.01
V
2
GE
= 17 V
4
diode
V
0.1
V
F
T
CE
VJ
5
t
[D1 version only]
= 25°C
3
T
VJ
= 125°C
1
6
IGBT
MUBW3512E7
V
13 V
15 V
11 V
9 V
s
V
3 - 4
10
7
4