IXGH40N120A2 IXYS, IXGH40N120A2 Datasheet - Page 3

• Manufacturer Part Number: IXGH40N120A2
• Description: IGBT 1200V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH40N120A2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 360W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 800
• Eoff, Typ, Tj=125°c, Igbt, (mj): 35
• Rthjc, Max, Igbt, (°c/w): 0.35
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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80
70
60
50
40
30
20
10
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
70
60
50
40
30
20
10
0
0
0
0
5
6
0.4
Fig. 5. Collector-to-Emitter Voltage
0.5
7
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.8
8
I
C
1
= 80A
V
V
V
40A
20A
9
CE
CE
GE
1.2
@ 125ºC
@ 25ºC
- Volts
- Volts
- Volts
1.5
10
1.6
V
V
GE
GE
11
= 15V
= 15V
13V
11V
13V
11V
2
12
2
T
J
13
= 25ºC
2.5
9V
7V
2.4
9V
7V
5V
14
2.8
15
3
300
270
240
210
180
150
120
200
180
160
140
120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
80
60
40
20
0
0
-50
4.5
0
V
GE
V
2
Fig. 2. Exteded Output Characteristics
GE
-25
= 15V
13V
5.5
= 15V
Fig. 4. Dependence of V
4
0
Fig. 6. Input Admittance
Junction Temperature
T
6
J
11V
9V
6.5
7V
- Degrees Centigrade
25
V
V
8
GE
CE
@ 25ºC
- Volts
- Volts
7.5
10
50
T
J
IXGH 40N120A2
IXGT 40N120A2
12
= - 40ºC
125ºC
75
25ºC
8.5
CE(sat)
14
100
I
I
I
C
C
C
16
= 80A
= 40A
= 20A
on
9.5
125
18
10.5
20
150