IRG7PH35UPBF International Rectifier, IRG7PH35UPBF Datasheet - Page 5

• Manufacturer Part Number: IRG7PH35UPBF
• Description: IGBT N-CH 1200V 55A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH35UPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 55A
• Power - Max: 210W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 55A
• Collector Emitter Voltage Vces: 1.9V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-247AC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
T
J
T
J
= 175°C; L = 680μH; V
= 175°C; L = 680μH; V
10000
1000
1000
100
100
10
80
70
60
50
40
30
20
10
Fig. 12 - Typ. Transfer Characteristics
10
Fig. 16 - Typ. Switching Time vs. R
1
0
Fig. 14 - Typ. Switching Time vs. I
0
4
0
t R
td ON
td ON
t F
td OFF
V
t R
V GE, Gate-to-Emitter Voltage (V)
5
CE
20
10
T J = 175°C
= 50V, tp = 30μs
6
CE
CE
40
= 600V, R
= 600V, I
R G (Ω)
td OFF
I C (A)
t F
7
20
60
T J = 25°C
8
G
CE
= 10Ω; V
= 20A; V
30
80
9
C
G
GE
100
10
GE
= 15V
40
= 15V
IRG7PH35UPbF/IRG7PH35U-EP
T
J
T
= 175°C; L = 680μH; V
J
= 175°C; L = 680μH; V
10000
4000
3000
2000
1000
1000
3500
3000
2500
2000
1500
1000
500
100
10
0
Fig. 17 - Typ. Capacitance vs. V
Fig. 15 - Typ. Energy Loss vs. R
0
0
0
Fig. 13 - Typ. Energy Loss vs. I
Cies
100
Cres
Coes
V
20
GE
10
= 0V; f = 1MHz
200
CE
CE
40
V CE (V)
= 600V, I
E ON
R G (Ω)
= 600V, R
I C (A)
300
20
E ON
60
400
E OFF
CE
G
= 10Ω; V
= 20A; V
30
80
E OFF
500
C
CE
G
600
100
GE
GE
40
= 15V
= 15V
5