IRGP20B120UD-EP International Rectifier, IRGP20B120UD-EP Datasheet
IRGP20B120UD-EP
Specifications of IRGP20B120UD-EP
Related parts for IRGP20B120UD-EP
IRGP20B120UD-EP Summary of contents
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... Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA W Weight t Z Transient Thermal Impedance Junction-to-Case JC www.irf.com IRGP20B120UD-E G N-channel (Fig.1) (Fig.1) (Fig.3, Fig. CT.5) (Fig.4, Fig. CT.2) (Fig.2) (Fig.2) 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Min. ––– ...
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... IRGP20B120UD-E Electrical C h aracteristics @ 25° less o th erw ise sp ecified ) P aram eter lle cto r- itte lta ff lta lle cto r- itte tio lta (on lta (th ff lta (th sco cta lta lle cto rre lta - itte rre itch aracteristics @ T P aram eter ( itte ( lle cto ( ...
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... Fig.1 - Maximum DC Collector Current vs. Case Temperature (°C) C Fig.3 - Forward SOA T =25°C; Tj < 150°C C 1000 100 0 100 V (V) CE www.irf.com 120 160 PULSED 2µs 10µs 100µs 1ms 10ms 1000 10000 IRGP20B120UD tio (° ° ...
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... IRGP20B120UD-E Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300µ 18V 15V 12V 10V (V) CE Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300µ 18V 15V 12V 10V ( Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300µ 18V 15V 12V GE 45 ...
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... Fig.11 - Typical V Tj= 125° www.irf.com GE =10A CE =20A CE =40A =10A CE I =20A CE I =40A (V) IRGP20B120UD-E Fig.10 - Typical Tj= 25° (V) GE Fig.12 - Typ. Transfer Characteristics V =20V; tp=20µs CE 250 Tj=25°C 225 Tj=125°C 200 175 150 125 100 75 50 Tj=125°C 25 Tj=25° ...
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... IRGP20B120UD-E Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200µH; V Rg= 6000 5000 4000 3000 2000 1000 (A) C Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200µ =20A; V =15V CE GE 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 ...
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... GE I =20A; Tj=125° Rg=10 30 Rg= Rg= 200 400 600 (A/µs) F www.irf.com / =15V Rg=5 800 1000 1200 IRGP20B120UD-E Fig.18 - Typical Diode Tj=125°C; I =20A (ohms) Fig.20 - Typical Diode =600V; V =15V; Tj=125° 7000 6500 10 6000 22 51 5500 50A 5000 40A 4500 30A ...
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... IRGP20B120UD-E Fig.22 - Typical Capacitance =0V; f=1MHz GE 10000 1000 100 ( Fig.21 - Typ. Diode E Tj=125°C 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 ies C oes C res 60 80 100 vs. I rec (A) F Fig.23 - Typ. Gate Charge vs =20A; L=600µ Total Gate Charge (nC) ...
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... Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case =0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.00010 www.irf.com Notes: 1. Duty factor Peak T 0.00100 0.01000 t , Rectangular Pulse Duration (sec) 1 IRGP20B120UD thJC C 0.10000 1.00000 10.00000 9 ...
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... IRGP20B120UD-E Fig. CT.1 - Gate Charge Circuit (turn-off Fig. CT.3 - S.C. SOA Circuit D riv 900V C Fig. CT.5 - Resistive Load Circuit Fig. CT.2 - RBSOA Circuit Fig. CT.4 - Switching Loss Circuit d iod e cla 1000V www.irf.com ...
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... IRGP20B120UD-E Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 800 600 90% test current 400 t r TEST CURRENT 200 10% test current 0 Eon Loss -200 -0.2 -0.1 0 (µs) Fig. WF.4 - Typ. S.C. Waveform @ T =150° ...
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... IRGP20B120UD-E TO-247AD Case Outline and Dimensions IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 12 WORLD HEADQUARTERS: 233 Kansas St ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...