IXGT24N60CD1 IXYS, IXGT24N60CD1 Datasheet - Page 4

• Manufacturer Part Number: IXGT24N60CD1
• Description: IGBT 48A 600V TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT24N60CD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 24
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 60
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.6
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 24
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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0.001
1.00
0.75
0.50
0.25
0.00
0.01
0.1
0.00001
16
12
8
4
0
1
0
0
Fig.7. Dependence of E
Fig.9. Gate Charge
Fig. 11 IGBT Transient Thermal Resistance
D=0.05
D=0.02
D=0.5
D=0.2
D=0.1
D=0.01
T
R
V
J
G
I
CE
= 125°C
C
= 10
= 24A
= 300V
10
W
20
Q
g
- nanocoulombs
I
C
Single pulse
20
- Amperes
0.0001
E
(ON)
40
30
OFF
E
and E
(OFF)
60
40
OFF
on I
0.001
80
50
C
Pulse Width - Seconds
2.0
1.5
1.0
0.5
0.0
100
0.1
2.0
1.5
1.0
0.5
0.0
40
10
0.01
1
0
0
Fig.8. Dependence of E
Fig.10. Turn-off Safe Operating Area
E
T
E
E
(ON)
J
(ON)
(ON)
T
R
dV/dt < 5V/ns
= 125°C
J
100
G
10
= -55 to +125°C
= 4.7
W
200
20
R
V
G
CE
I
I
I
C
- Ohms
0.1
C
C
300
= 12A
30
- Volts
=48A
= 24A
D = Duty Cycle
OFF
400
IXGH 24N60CD1
IXGT 24N60CD1
40
on R
G
500
50
E
E
E
(OFF)
(OFF)
(OFF)
600
60
1
2.0
1.5
1.0
0.5
0.0
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