IRG4PH50UDPBF International Rectifier, IRG4PH50UDPBF Datasheet
IRG4PH50UDPBF
Manufacturer Part Number
IRG4PH50UDPBF
Description
IGBT W/DIODE 1200V 45A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4PH50UDPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 24A
Current - Collector (ic) (max)
45A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
3600 pF
Current, Collector
45 A
Energy Rating
3.6 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.64 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.2 V
Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
45
Ic @ 100c (a)
24
Vce(on)@25c Typ (v)
2.78
Vce(on)@25c Max (v)
3.70
Ets Typ (mj)
3.6
Ets Max (mj)
4.1
Qrr Typ Nc 25c
260
Qrr Max Nc 25c
675
Vf Typ
2.50
Pd @25c (w)
200
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PH50UDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH50UDPBF
Manufacturer:
IR
Quantity:
20 000
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
• Higher switching frequency capability than
• Highest efficiency available
• HEXFRED diodes optimized for performance with
Absolute Maximum Ratings
• UltraFast: Optimized for high operating
• New IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
• Lead-Free
R
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
competitive IGBTs
IGBT's . Minimized recovery characteristics require
parameter distribution and higher efficiency than
previous generations
C
C
CM
LM
F
FM
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
J
STG
θJC
θJC
θCS
θJA
CES
GE
D
D
@ T
less/no snubbing
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
TM
ultrafast,
IRG4PH50UDPbF
G
n-cha nn el
Min.
300 (0.063 in. (1.6mm) from case )
–––
–––
–––
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to + 150
UltraFast CoPack IGBT
TO-247AC
6 (0.21)
Max.
1200
± 20
180
180
180
200
45
24
16
78
Typ.
0.24
–––
–––
–––
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
0.64
0.83
–––
–––
= 1200V
40
PD -95190
= 2.78V
C
= 24A
Units
Units
g (oz)
°C/W
°C
A
V
W
V
1
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IRG4PH50UDPBF Summary of contents
Page 1
... R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight IRG4PH50UDPbF G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case ) Min. ––– ––– ––– ––– ––– ...
Page 2
... IRG4PH50UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
Page 3
... IRG4PH50UDPbF Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information ...