IXGH20N120BD1 IXYS, IXGH20N120BD1 Datasheet - Page 4

• Manufacturer Part Number: IXGH20N120BD1
• Description: IGBT 1200V 40A FRD TO-247
• Manufacturer: IXYS

Specifications of IXGH20N120BD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
IXYS reserves the right to change limits, test conditions, and dimensions.
1 0000
1 000
1 00
1 6
1 4
1 2
1 0
1 4
1 2
1 0
1 0
8
6
4
2
0
8
6
4
2
0
Fig. 9. Dependence of E
0
0
0
V
V
So lid lines - R
Dashed lines - R
G E
C E
T
V
V
Fig. 7. Dependence of E
f = 1 M Hz
J
G E
C E
5
= 1 5V
= 960V
= 1 25ºC
25
1 0
= 1 5V
= 960V
T
Fig. 11. Capacitance
J
1 0
- Degrees Centigrade
50
20
G
R
1 5
V
= 56 Ohms
G
CE
G
= 5 Ohms
- Ohms
75
- Volts
30
20
off
25
on Temperature
1 00
40
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
off
I
I
I
I
I
30
on R
C
C
C
I
C
C
= 40A
= 20A
= 1 0A
C
C
C
C
= 40A
= 1 0A
= 20A
1 25
50
i es
oes
res
35
G
1 50
60
40
1 5
1 2
90
80
70
60
50
40
30
20
1 4
1 2
1 0
1 0
9
6
3
0
8
6
4
2
0
Fig. 12. Reverse-Bias Safe Operating Area
1 00
1 0
0
V
I
I
T
V
V
C
G
T
R
dV/dT < 10V/ns
Fig. 8. Dependence of E
R
C E
1 0
J
G E
C E
= 20A
= 1 0mA
J
G
= 1 25ºC
300
G
1 5
= 125
= 600V
= 1 5V
= 960V
= 10 Ohms
= 56 Ohms
Fig. 10. Gate Charge
20
Q
º
G
C
500
20
I
30
- nanoCoulombs
C
V
- Amperes
CE
IXGH 20N120B
IXGT 20N120B
700
25
40
- Volts
R
50
G
900
30
= 5 Ohms
off
6,534,343
60
on I
1 1 00
35
C
70
1 300
40
80