IXGT60N60B2 IXYS, IXGT60N60B2 Datasheet - Page 5

• Manufacturer Part Number: IXGT60N60B2
• Description: IGBT 600V 75A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT60N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.8
• Rthjc, Max, Igbt, (°c/w): 0.25
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
350
300
250
200
150
100
100
50
10
0.275
0.225
0.175
0.125
0.075
0.25
0.15
0.05
25
0.2
0.1
0
t
t
R
V
V
d(off)
fi
1
Sw itching Tim e on Tem perature
GE
CE
35
Fig. 13. Dependence of Turn-Off
G
f = 1 MHz
-
5
= 3.3Ω
= 400V
= 15V
- - - - -
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
I
15
C
V
65
= 25A
C E
100A
50A
75
20
- Volts
I
C
= 100A
85
50A
25A
25
Fig. 16. Maxim um Transient Therm al Resistance
95
C
C
30
C
ies
oes
105 115 125
res
10
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
20
V
I
I
C
G
CE
= 50A
= 10mA
= 300V
40
Fig. 14. Gate Charge
100
Q
60
G
- nanoCoulombs
80
100
IXGH 60N60B2
IXGT 60N60B2
120
140
160
180
1000