IXGT32N60C IXYS, IXGT32N60C Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGT32N60C
Manufacturer Part Number
IXGT32N60C
Description
IGBT 60A 600V TO-268
Series
HiPerFAST™, Lightspeed 2™r
Specifications of IXGT32N60C
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 32A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.85
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
HiPerFAST
Lightspeed
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C110
CM
CES
GES
J
JM
stg
CGR
C
GE(th)
CE(sat)
CES
GES
GEM
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C110
, V
TM
TM
GE
VJ
CES
GE
= 125°C, R
= ±20 V
= 15 V
GE
CE
IGBT
Series
= 0 V
= V
GE
GE
= 1 MW
G
= 10 W
T
T
J
J
(T
= 25°C
= 150°C
J
= 25°C, unless otherwise specified)
TO-247 AD
TO-268
min.
600
2.5
IXGH 32N60C
IXGT 32N60C
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.1
I
1.13/10 Nm/lb.in.
CM
= 64
600
600
±20
±30
120
200
150
300
60
32
CES
max.
±100
6
4
200
2.5
5
1
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
g
Features
• International standard packages
• High current handling capability
• Latest generation HDMOS
• MOS Gate turn-on
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
TO-268
TO-247 AD
G = Gate,
E = Emitter,
(IXGT)
(IXGH)
JEDEC TO-247 and surface
mountable TO-268
- drive simplicity
power supplies
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)typ
G
C
G
E
C = Collector,
TAB = Collector
E
= 600 V
=
=
=
2.1 V
55 ns
97538B (7/00)
TM
60 A
process
C (TAB)
C (TAB)
1 - 4
Related parts for IXGT32N60C
IXGT32N60C Summary of contents
... V CES CE CES ± GES CE(sat) C C110 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 32N60C IXGT 32N60C Maximum Ratings 600 = 1 MW 600 GE ±20 ± 120 = 0.8 V CES 200 -55 ... +150 150 -55 ...
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 32N60C IXGT 32N60C TO-247 AD (IXGH) Outline Dim ...
... J GE 13V Volts CE Fig. 3. High Temperature Output Characteristics 100 V = 10V 125° 25° Volts GE Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 9V 11V 11V 10000 IXGH 32N60C IXGT 32N60C 200 T = 25° 15V 13V GE 160 120 Volts CE Fig. 2. Extended Output Characteristics 1 ...
... nanocoulombs g Fig. 9. Gate Charge 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 4 E (OFF (ON and OFF C 75 100 125 D = Duty Cycle 0.001 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXGH 32N60C ...
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