IXGH20N60BD1 IXYS, IXGH20N60BD1 Datasheet - Page 2

• Manufacturer Part Number: IXGH20N60BD1
• Description: IGBT 40A 600V TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH20N60BD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 20
• Rthjc, Max, Diode, (ºc/w): 1
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
RM
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
rr
fs
off
on
off
F
oes
thJC
thCK
thJC
ies
res
g
ge
gc
I
Pulse test, t £ 300 ms, duty cycle d £ 2 % T
I
V
I
F
F
F
R
= 30A, V
= 30A, V
= 1 A; -di/dt = 100 A/ms; V
= 100 V
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
Test Conditions
C
= I
V
I
TO-247
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
C
C
C
CE
GE
GE
CE
CE
C90
= 25 V, V
= I
= 0 V,
= 0 V, -di
= I
= 0.8 V
= I
= 0.8 V
; V
CE
CE
C90
C90
(Clamp) > 0.8 • V
C90
(Clamp) > 0.8 • V
CE
, V
, V
, V
= 10 V,
GE
CES
CES
G
G
GE
GE
F
GE
/dt = 100 A/ms
= 15 V, V
= 15 V, L = 100 mH,
, R
= 15 V, L = 100 mH
, R
= 0 V, f = 1 MHz
G
G
J
J
R
= 25°C
= 125°C
= R
= R
= 30 V
off
off
CE
CES
CES
= 10 W
= 10 W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
(T
Min. Recommended Footprint
= 0.5 V
, higher T
, higher T
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
CES
T
T
J
T
J
J
= 25°C
J
4,881,106
4,931,844
=100°C
J
J
= 150°C
= 25°C
or
or
min.
min.
Characteristic Values
Characteristic Values
9
5,017,508
5,034,796
1500
typ.
0.75
0.25
typ.
100
150
110
100
220
140
0.7
1.2
25
17
40
55
12
20
15
25
15
35
6
max.
max.
0.83 K/W
5,049,961
5,063,307
200
150
1.6
2.5
1.0 K/W
1.0 mJ
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
TO-268AA (D
5,486,715
5,381,025
Dim.
Dim. Millimeter
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
A
B
C
D
E
F
G
H
J
K
L
M
N
2
1
2
1
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
13.80 14.00
15.85 16.05
18.70 19.10
IXGH 20N60BD1
IXGT 20N60BD1
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
4.9
2.7
.02
1.9
5.45 BSC
0.25 BSC
.4
-
3
PAK)
Max.
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
Min.
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Inches
Min. Max.
.75
Inches
.215 BSC
.010 BSC
0.177
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83
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