IXGH40N60C IXYS, IXGH40N60C Datasheet
IXGH40N60C
Manufacturer Part Number
IXGH40N60C
Description
IGBT 75A 600V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™, Lightspeed 2™r
Datasheet
1.IXGH40N60C.pdf
(2 pages)
Specifications of IXGH40N60C
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
75
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH40N60C
Manufacturer:
IXYS
Quantity:
3 000
Company:
Part Number:
IXGH40N60C
Manufacturer:
IXYS
Quantity:
3 000
Company:
Part Number:
IXGH40N60C2
Manufacturer:
IXYS
Quantity:
3 000
Company:
Part Number:
IXGH40N60C2
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXGH40N60C2D1
Manufacturer:
IXYS
Quantity:
15 500
HiPerFAST
Lightspeed
Preliminary Data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
C25
C110
CM
CES
GES
GEM
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
C
d
© 2003 IXYS All rights reserved
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 110 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C110
, V
TM
TM
VJ
GE
GE
CES
= 125 C, R
= 20 V
= 15 V
GE
CE
IGBT
Series
= 0 V
= V
GE
GE
= 1 M
G
= 10
T
T
(T
J
J
= 25 C
= 150 C
J
= 25 C, unless otherwise specified)
TO-247 AD
TO-268 SMD
IXGH 40N60C
IXGT 40N60C
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
@ 0.8 V
typ.
2.1
I
1.13/10 Nm/lb.in.
CM
600
600
150
= 80
250
150
300
20
30
75
40
CES
max.
6
4
200
100
2.5
5
1
mA
nA
W
C
C
C
C
V
V
A
V
V
V
V
A
A
A
A
V
g
g
TO-268
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
Advantages
(IXGT)
(IXGH)
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
=
=
E
DS98802A(01/03)
2.5 V
75 A
75 ns
TM
process
C (TAB)
C (TAB)
Related parts for IXGH40N60C
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
TRANS IGBT CHIP N-CH 600V 24A 3TO-247 AD
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS IGBT CHIP N-CH 1200V 30A 3TO-247 AD
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS IGBT CHIP N-CH 900V 24A 3TO-247
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS IGBT CHIP N-CH 1700 at TJ=25C TO 150CV 32A 3TO-247 AD
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS IGBT CHIP N-CH 600V 40A 3TO-247
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS IGBT CHIP N-CH 600V 40A 3TO-247
Manufacturer:
IXYS Corporation
Part Number:
Description:
TRANS IGBT CHIP N-CH 600V 40A 3TO-247 AD
Manufacturer:
IXYS Corporation
IXGH40N60C Summary of contents
Page 1
... I = 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C110 GE © 2003 IXYS All rights reserved IXGH 40N60C IXGT 40N60C Maximum Ratings 600 = 1 M 600 150 = 0.8 V CES 250 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. TO-247 AD 6 TO-268 SMD 4 Characteristic Values ( unless otherwise specified) J min ...
Page 2
... CE higher T or increased off R thJC R (IXGH40N60C) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min ...