IXGT31N60D1 IXYS, IXGT31N60D1 Datasheet
IXGT31N60D1
Manufacturer Part Number
IXGT31N60D1
Description
IGBT 60A 600V TO-268
Manufacturer
IXYS
Datasheet
1.IXGH31N60D1.pdf
(2 pages)
Specifications of IXGT31N60D1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 31A
Current - Collector (ic) (max)
60A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
31
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
400
Eoff, Typ, Tj=125°c, Igbt, (mj)
12
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
31
Rthjc, Max, Diode, (ºc/w)
1.0
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
© 2000 IXYS All rights reserved
Ultra-Low V
IGBT with Diode
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
BV
V
I
I
V
CM
C25
C90
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3) TO-247
TO-247
TO-268
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
CE(sat)
, V
GE
VJ
GE
CES
= 125°C, R
= 15 V
= ±20 V
GE
CE
= 0 V
= V
GE
GE
= 1 MW
G
= 10 W
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXGH 31N60D1
IXGT 31N60D1
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
= 62
600
600
±20
±30
150
150
300
CES
60
31
80
6
4
max.
±100
200
5.5
1.7
3
mA
°C
°C
°C
°C
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
g
g
TO-268
(IXGT)
TO-247 AD
(IXGH)
G = Gate,
E = Emitter,
Features
• IGBT and anti-parallel FRED in one
• Low V
• MOS Gate turn-on
• Fast Recovery Epitaxial Diode (FRED)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Switch-mode and resonant-mode
Advantages
• Space savings (two devices in one
• Easy to mount with 1 screw
• Reduces assembly time and cost
• High power density
V
I
V
C25
package
- for minimum on-state conduction
- drive simplicity
- soft recovery with low I
package)
Uninterruptible power supplies (UPS)
power supplies
(isolated mounting screw hole)
CES
CE(sat)
losses
CE(sat)
G
G
C
E
= 600 V
= 60 A
= 1.7 V
E
C = Collector,
TAB = Collector
RM
98559A (7/00)
C (TAB)
C (TAB)
1 - 2
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IXGT31N60D1 Summary of contents
Page 1
... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 31N60D1 IXGT 31N60D1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1 ...
Page 2
... J min. typ 150° 25° =100°C 100 25° Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 31N60D1 IXGT 31N60D1 TO-247 AD (IXGH) Outline 100 Dim. Millimeter ns Min ...