IXBH6N170 IXYS, IXBH6N170 Datasheet
IXBH6N170
Specifications of IXBH6N170
Available stocks
Related parts for IXBH6N170
IXBH6N170 Summary of contents
Page 1
... GE(th 0.8 • CES CE CES ±20V 0V, V GES 6A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXBH6N170 IXBT6N170 Maximum Ratings 1700 Ω 1700 ± 20 ± Ω ≤ V 1350 CES 75 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min ...
Page 2
... R 4.32 S 6.15 BSC TO-268 (IXBT) Outline Max. 3.0 V μs A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBH6N170 IXBT6N170 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1 ...
Page 3
... GE 1 12A 1.4 C 1.3 1 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Degrees Centigrade J Fig. 6. Input Admittance 4.0 4.5 5.0 5.5 6.0 6.5 7 Volts GE IXBH6N170 IXBT6N170 V = 15V GE 13V 11V CE(sat 100 125 150 40ºC J 25ºC 125ºC 7.5 8.0 8.5 9.0 9.5 ...
Page 4
... Fig. 8. Forward Voltage Drop of Intrinsic Diode 25º 0.6 0.8 1.0 1.2 1 Volts F Fig. 10. Capacitance MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds IXBH6N170 IXBT6N170 T = 125ºC J 1.6 1.8 2.0 C ies C oes C res 0.1 1 IXYS REF: B_6N170(2N)10-09-08 ...
Page 5
... T - Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off ) T = 125º 15V 850V 120 150 180 210 R - Ohms G IXBH6N170 IXBT6N170 130 d(off) = 15V 120 GE 110 100 105 115 125 800 700 600 500 400 300 I = 12A C 200 100 0 240 270 ...