IRG4PC30KDPBF International Rectifier, IRG4PC30KDPBF Datasheet
IRG4PC30KDPBF
Specifications of IRG4PC30KDPBF
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IRG4PC30KDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • High short circuit rating optimized for motor control, t =10µs, @360V V (start 15V GE • Combines low conduction losses ...
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IRG4PC30KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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rate d volta 0.1 Fig. 1 ...
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IRG4PC30KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 ...
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1MHz ies res 1200 oes ies 900 600 C oes 300 C res ...
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IRG4PC30KD 5 Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical ...
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° ° ...
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IRG4PC30KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e µ Figure 19. www.irf.com ...
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IRG4PC30KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...