IXGH30N60B IXYS, IXGH30N60B Datasheet - Page 2

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IXGH30N60B

Manufacturer Part Number
IXGH30N60B
Description
IGBT 60A 600V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH30N60B

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
3
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH30N60B
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXGH30N60B2
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXGH30N60B2D1
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXGH30N60B2D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXGH30N60BD1
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXGH30N60BU1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
IXBH30N60B characteristic curves are located in the IXBH30N60BU1 data sheet.
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
d(on)
d(off)
fi
d(on)
d(off)
fi
TO-268AA (D
ri
ri
fs
off
on
off
oes
thJC
thCK
ies
res
g
ge
gc
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
(IXGH30N60B)
C
3
C
C
CE
CE
PAK)
= I
= I
= 0.8 V
= 0.8 V
= I
V
I
C110
C110
C
CE
= I
C110
, V
, V
J
J
= 25 V, V
or increased R
or increased R
C110
; V
GE
GE
CES
CES
, V
= 15 V, L = 100 mH,
= 15 V, L = 100 mH
CE
, R
CE
, R
CE
GE
= 10 V,
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
G
G
J
J
= 15 V, V
GE
= R
= R
= 25°C
= 150°C
= 0 V, f = 1 MHz
off
off
G
G
= 4.7 W
= 4.7 W
CE
= 0.5 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
Dim.
J
CES
CES
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
= 25°C, unless otherwise specified)
2
1
2
1
,
,
CES
13.80 14.00
15.85 16.05
18.70 19.10
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.45 BSC
Millimeter
4.9
2.7
.02
1.9
4,881,106
4,931,844
0.25 BSC
.4
min.
Max.
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
Characteristic Values
IXGH30N60B
5,017,508
5,034,796
2700
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min. Max.
typ.
0.25
190
125
130
100
200
290
.75
1.3
0.3
Inches
.215 BSC
.010 BSC
25
50
23
50
25
30
25
35
3
.057
.551
.632
.535
.752
.106
.055
.045
.161
.201
.114
.010
.026
max.
.83
0.62 K/W
5,049,961
5,063,307
150
220
190
35
75
2 mJ
K/W
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
Min. Recommended Footprint
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
IXGT30N60B
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
-
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Min.
Inches
0.177
Max.
2 - 2

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