IXDP35N60B IXYS, IXDP35N60B Datasheet
IXDP35N60B
Specifications of IXDP35N60B
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IXDP35N60B Summary of contents
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... V (BR)CES 0.7 mA GE(th CES CE CES ± GES CE(sat © 2002 IXYS All rights reserved IXDP 35N60 B IXDH 35N60 B IXDH 35N60 BD1 IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Maximum Ratings 600 = 20 kW 600 GE ±20 ± 110 < V CEK CES = 125°C ...
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... -di /dt = 400 A/µ 125° -di /dt = 100 A/µ thJC © 2002 IXYS All rights reserved IXDP 35N60 B Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 1600 150 90 = 480 V 120 125°C J 320 70 1.6 0.8 0.25 0.5 Characteristic Values (T = 25° ...
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... Fig. 1 Typ. output characteristics 125° 25° Fig. 3 Typ. transfer characteristics Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved IXDP 35N60 25° 20V 480V 30A C 100 120 IXDH 35N60 B IXDH 35N60 BD1 80 11V V = 17V 15V 13V ...
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... E on 1.0 0.5 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved IXDP 35N60 d(on off d(on off 300V ...