IXGT28N120B IXYS, IXGT28N120B Datasheet
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Manufacturer Part Number
IXGT28N120B
Description
IGBT 1200V 40A TO-268(D3)
Specifications of IXGT28N120B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 28A
Current - Collector (ic) (max)
50A
Power - Max
250W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
28
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
5
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
© 2004 IXYS All rights reserved
CM
CES
GES
C25
C110
J
JM
stg
GE(th)
CE(sat)
CGR
GES
GEM
C
CES
d
CES
Test Conditions
I
I
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
C
C
C
C
C
C
C
CE
CE
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA , V
= 250 µA, V
= V
= 0 V, V
= 28A, V
CES
, V
GE
VJ
GE
GE
= ±20 V
= 125°C, R
= 0 V
= 15 V
CE
GE
= V
= 0 V
GE
GE
(TO-247)
= 1 MΩ
G
= 5 Ω
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
IXGH 28N120B
IXGT 28N120B
TO-247 AD
TO-268
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
2.75
typ.
I
2.8
CM
1.13/10Nm/lb.in.
1200
1200
= 120
±20
±30
150
260
250
150
300
50
28
max.
CES
±100
6
4
3.5
25
5
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
g
Features
Advantages
TO-268 (IXGT)
G = Gate,
E = Emitter,
V
I
V
t
TO-247 AD (IXGH)
C25
fi(typ)
International standard packages
Low switching losses, low V
MOS Gate turn-on
- drive simplicity
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
JEDEC TO-247 AD
- Induction heating
- Rice cookers
JEDEC TO-268 and
High Voltage IGBT for resonant
power supplies
CES
CE(sat)
G
G
=
= 1200 V
C
=
=
E
C = Collector,
TAB = Collector
E
160 ns
3.5 V
50 A
DS98987E(04/04)
(sat)
C (TAB)
C (TAB)
Related parts for IXGT28N120B
IXGT28N120B Summary of contents
... GE(th CES CE CES GE = ± GES 28A CE(sat © 2004 IXYS All rights reserved IXGH 28N120B IXGT 28N120B Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 150 = 5 Ω 120 0.8 V 250 -55 ... +150 150 -55 ... +150 300 260 (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 ...
... G off off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ 1700 120 ...
... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 56A C 28A 14A Volts G E © 2004 IXYS All rights reserved º C 240 210 180 150 9V 120 3.5 4 4.5 5 º C 1.4 1.3 1.2 9V 1.1 1.0 7V 0.9 0.8 5V 0.7 3.5 4 4.5 ...
... T = 125ºC J 1000 V = 15V 960V CE 800 600 I = 14A C 400 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 100 C º 125 C J º 450 400 350 ...
... V = 960V CE 250 200 150 I = 56A C 100 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.00 0.50 0.10 1 © 2004 IXYS All rights reserved 56A 28A 14A 105 115 125 140 120 C ies 100 oes res Fig. 17. Maxim um Transient Therm al Resistance ...
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