IXGH48N60B3D1 IXYS, IXGH48N60B3D1 Datasheet - Page 7

• Manufacturer Part Number: IXGH48N60B3D1
• Description: IGBT 600V FRD TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH48N60B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 32A
• Current - Collector (ic) (max): 48A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 116
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.30
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 21. Forward current I
Fig. 24. Dynamic parameters Q
Fig. 27. Transient thermal resistance junction to case
© 2008 IXYS CORPORATION, All rights reserved
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0.001
0
1
0.01
0
0
0.1
0.0001
T
1
T
VJ
versus T
VJ
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
0.001
T
F
VJ
versus V
T
V
120
VJ
F
=25°C
r
, I
°C
3
RM
0.001
V
F
160
Time - Seconds
t
0.01
rr
Q
1000
Fig. 22. Reverse recovery charge Q
Fig. 25. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
versus -di
200
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
0.1
F
/dt
I
I
I
0.1
F
F
F
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
rr
VJ
F
R
t
versus -di
/dt
= 100°C
= 300V
A/μs
s
800
A/μs
DSEP 29-06
1000
1000
1
F
1
r
/dt
I
V
RM
FR
Fig. 23. Peak reverse current I
30
25
20
15
10
20
15
10
Fig. 26. Peak forward voltage V
A
5
0
V
5
0
0
0
T
V
T
I
IXGH48N60B3D1
t
F
VJ
fr
R
VJ
= 100°C
= 300V
= 100°C
= 30A
200
200
versus -di
t
fr
versus di
I
I
I
F
F
F
= 60A
= 30A
= 15A
400
400
IXYS REF: G_48N60B3D1(56) 05-05-08-A
V
F
FR
/dt
F
600
600
/dt
di
-di
F
/dt
F
/dt
A/μs
A/μs
800
800
RM
FR
1000
1000
and
1.00
0.75
0.50
0.25
0.00
μs
t
fr