IRG4PC50FDPBF International Rectifier, IRG4PC50FDPBF Datasheet
IRG4PC50FDPBF
Specifications of IRG4PC50FDPBF
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IRG4PC50FDPBF Summary of contents
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... Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight IRG4PC50FDPbF G TM ultrafast, n-cha 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD -95225 Fast CoPack IGBT 600V CES = 1 ...
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... IRG4PC50FDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ---- GE(th Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Load Current vs. Frequency 0° ° µ lle itte lta Fig Typical Output Characteristics www.irf.com IRG4PC50FDPbF 1 f, Frequenc y (k Hz) (Load Current = I of fundamental) RMS 1000 100 ° Fig Typical Transfer Characteristics D uty c yc le: 50 125° 90°C sink ...
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... IRG4PC50FDPbF 100 ture (° Fig Maximum Collector Current vs. Case Temperature ING ( 0.01 0.00001 0.000 1 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V µ 2.0 1.5 1.0 125 150 -60 -40 -20 Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0.001 0. ratio tio (°C ) ...
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... C ies res Collector-to-Emitter Voltage ( Fig Typical Capacitance vs. Collector-to-Emitter Voltage 5. 480V 15V 25° 39A C 4.50 4.00 3. ate R esistance ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PC50FDPbF 2 0 SHORTED Fig Typical Gate Charge vs -60 - Fig Typical Switching Losses vs Gate-to-Emitter Voltage = 5.0 Ω ...
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... IRG4PC50FDPbF 5.0 Ω 150° 480V 15V Collector-to-Em itter Current ( Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 100 150 ° 125 ° ° 0.6 1.0 1.4 1.8 2 lta 20V = 12 5° TIN ...
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... Fig Typical Reverse Recovery vs. di 1500 ° °C J 1200 900 I = 50A F 600 300 0 100 /µ Fig Typical Stored Charge vs. di www.irf.com IRG4PC50FDPbF 100 10 1 100 1000 Fig Typical Recovery Current vs. di /dt f 10000 1000 I = 10A F 100 1000 100 /dt Fig Typical ° ° ...
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... IRG4PC50FDPbF Same type device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d( td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on 10 .T. td (off d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining ...
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... Figure 18e. Macro Waveforms for L 1000V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com IRG4PC50FDPbF Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current Test Circuit 480V @25°C C Test Circuit 9 ...
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... IRG4PC50FDPbF Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...