IXGH120N30B3 IXYS, IXGH120N30B3 Datasheet - Page 4

• Manufacturer Part Number: IXGH120N30B3
• Description: IGBT 300V 120A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH120N30B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 120A
• Current - Collector (ic) (max): 75A
• Power - Max: 540W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
270
240
210
180
150
120
1.00
0.10
0.01
140
120
100
90
60
30
80
60
40
20
0
0.0001
0
50
0
T
R
dV / dt < 10V / ns
Fig. 9. Reverse-Bias Safe Operating Area
75
J
G
= 125ºC
= 1Ω
40
100
Fig. 7. Transconductance
125
80
T
150
J
I
= - 40ºC
V
C
CE
120
- Amperes
0.001
175
- Volts
25ºC
200
125ºC
160
Fig. 11. Maximum Transient Thermal Impedance
225
200
250
275
240
0.01
300
Pulse Width - Seconds
280
325
100,000
10,000
1,000
16
14
12
10
100
8
6
4
2
0
10
0
0
0.1
20
V
I
I
f
C
G
CE
= 1 MHz
= 120A
= 10mA
5
= 150V
40
60
10
Fig. 8. Gate Charge
Fig. 10. Capacitance
80
Q
G
15
- NanoCoulombs
100 120 140
V
IXGH120N30B3
CE
20
- Volts
1
IXYS REF: G_120N30B3(76)08-07-08-B
25
160 180 200
C ies
C oes
C res
30
35
220 240
10
40