IXGH100N30C3 IXYS, IXGH100N30C3 Datasheet - Page 4

• Manufacturer Part Number: IXGH100N30C3
• Description: IGBT HI SPEED 300V 100A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH100N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector-emitter Voltage: 300V
• Operating Temperature (min): -55C
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 500
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 100
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.85
• Tfi, Typ, Tj=25°c, Igbt, (ns): 94
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.52
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
120
110
100
100
90
80
70
60
50
40
30
20
10
10
0
0.0001
0
0
T
J
= - 40ºC
f = 1 MHz
20
125ºC
5
25ºC
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
15
80
I
C
V
0.001
CE
- Amperes
100
20
- Volts
120
25
Fig. 11. Maximum Transient Thermal Impedance
C ies
C oes
C res
140
30
160
35
180
0.01
Pulse Width - Seconds
200
40
240
200
160
120
16
14
12
10
80
40
8
6
4
2
0
0
50
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
C
G
0.1
CE
T
R
dV / dT < 10V / ns
20
J
= 100A
= 10mA
G
= 150V
= 125ºC
= 2Ω
100
40
Fig. 8. Gate Charge
150
Q
60
G
V
- NanoCoulombs
CE
80
- Volts
200
1
IXGH100N30C3
100
250
120
140
300
160
350
10