IXGH10N170 IXYS, IXGH10N170 Datasheet - Page 5

• Manufacturer Part Number: IXGH10N170
• Description: IGBT 1700V 20A TO-247
• Manufacturer: IXYS

Specifications of IXGH10N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 20
• Ic90, Tc=90°c, Igbt, (a): 10
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Igbt, (ns): 495
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.7
• Rthjc, Max, Igbt, (°c/w): 1.1
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
1400
1200
1000
400
380
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260
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350
300
250
200
150
100
800
600
400
200
50
0
0
10
25
Fig. 16. Resistive Turn-off Switching Times
4
Fig. 14. Resistive Turn-on Switching Times
t
T
V
R
V
V
r
J
CE
20
35
GE
CE
G
= 125ºC, V
6
= 16Ω
Fig. 12. Resistive Turn-on Rise Time
= 850V
= 15V
= 850V
45
30
vs. Collector Current
8
T
vs. Junction Temperature
t
J
vs. Gate Resistance
d(on
GE
= 125ºC, 25ºC
55
40
T
= 15V
)
J
10
- - - -
I
- Degrees Centigrade
I
C
C
R
65
= 20A
50
- Amperes
G
- Ohms
I
12
C
75
= 10A
t
R
V
60
f
CE
G
= 16Ω, V
14
I
= 850V
C
85
70
= 20A
t
16
d(off
95
GE
80
= 15V
)
- - - -
I
105
18
C
90
= 10A
115
20
100
210
190
170
150
130
110
90
70
65
60
55
50
45
40
35
30
25
125
800
700
600
500
400
300
200
100
350
300
250
200
150
100
700
650
600
550
500
450
400
350
300
250
200
50
0
25
Fig. 15. Resistive Turn-off Switching Times
Fig. 17. Resistive Turn-off Switching Times
10
4
R
V
V
35
G
GE
CE
t
T
V
20
= 16Ω
f
Fig. 13. Resistive Turn-on Rise Time
J
CE
= 15V
= 850V
6
= 125ºC, V
= 850V
45
vs. Junction Temperature
I
I
30
C
C
= 10A
= 20A
I
vs. Gate Resistance
8
55
C
T
vs. Collector Current
t
= 10A
40
d(off
J
GE
- Degrees Centigrade
= 15V
65
I
)
10
C
- - - -
R
= 20A
50
G
I
C
- Ohms
75
- Amperes
T
12
60
t
R
V
J
T
f
G
CE
J
= 25ºC
85
= 125ºC
= 16Ω, V
= 850V
70
14
95
IXGH10N170
IXGT10N170
t
GE
80
d(off)
105
IXYS REF: G_10N170(3N)10-13-08-A
16
= 15V
- - - -
90
115
18
125
100
160
150
140
130
120
110
100
90
500
450
400
350
300
250
200
150
100
50
0
20