IXGH40N60B2D1 IXYS, IXGH40N60B2D1 Datasheet
IXGH40N60B2D1
Specifications of IXGH40N60B2D1
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IXGH40N60B2D1 Summary of contents
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... V GE(th CES CE CES ±20 V GES CE(sat © 2003 IXYS All rights reserved IXGH 40N60B2D1 IXGT 40N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... 100 -di/dt = 100 A/µ thJC Min. Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 2560 ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4 3 60A 3 C 30A 15A 2 Volts G E © 2003 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 210 9V 180 150 7V 120 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1.0 0.9 0.8 5V 0.7 ...
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... 60A 200 C 150 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 120 150 180 c 2.7 2 ...
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... J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 1 © 2003 IXYS All rights reserved 15A 105 115 125 C ies C oes C res Fig. 16. Maxim um Trans ient Therm al Res istance 10 Pulse Width - milliseconds IXGH 40N60B2 IXGT 40N60B2 Fig ...
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... K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 1000 T = 100° 300V nC R 800 ...