IXGH48N60A3D1 IXYS, IXGH48N60A3D1 Datasheet - Page 7

no-image

IXGH48N60A3D1

Manufacturer Part Number
IXGH48N60A3D1
Description
IGBT 300A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH48N60A3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.35V @ 15V, 32A
Current - Collector (ic) (max)
48A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
224
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.6
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
0.90
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig. 21. Forward current I
Fig. 24. Dynamic parameters Q
Fig. 27. Transient thermal resistance junction to case
© 2008 IXYS CORPORATION, All rights reserved
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
versus T
VJ
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
T
F
VJ
versus V
T
V
120
VJ
F
=25°C
r
, I
°C
3
RM
0.001
V
F
160
t
rr
Q
1000
r
800
600
400
200
Fig. 22. Reverse recovery charge Q
Fig. 25. Recovery time t
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
F
I
I
I
0.1
F
F
F
/dt
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
rr
VJ
F
R
t
/dt
versus -di
= 100°C
= 300V
A/μs
s
800
A/μs
DSEP 29-06
1000
1000
1
F
r
/dt
I
V
RM
FR
Constants for Z
30
25
20
15
10
20
15
10
A
5
0
V
5
0
Fig. 23. Peak reverse current I
Fig. 26. Peak forward voltage V
1
2
3
0
0
i
T
I
t
IXGH48N60A3D1
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
versus -di
t
fr
R
0.502
0.193
0.205
I
I
I
F
F
F
versus di
= 60A
= 30A
= 15A
thi
400
400
thJC
(K/W)
V
calculation:
FR
600
600
F
F
di
/dt
-di
/dt
F
/dt
F
/dt
A/μs
A/μs
800
800
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
μs
and
t
fr

Related parts for IXGH48N60A3D1