IRG4BC40W-SPBF International Rectifier, IRG4BC40W-SPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4BC40W-SPBF
• Description: IGBT WARP 600V 40A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC40W-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Power Dissipation Pd: 160W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 40A
• Collector Emitter Saturation Voltage Vce(sat): 2.5V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Operating Temperature Range: -55°C To +150°C
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part
• Other names: *IRG4BC40W-SPBF

IRG4BC40W
Notes:
Q
R
S
Electrical Characteristics @ T
Switching Characteristics @ T
E
V
V
V
V
g
I
I
Q
Q
Q
t
t
t
t
E
E
t
t
t
t
E
C
C
C
CES
GES
d(off)
f
d(on)
d(off)
f
L
d(on)
r
r
ts
V
fe
(BR)CES
(BR)ECS
CE(ON)
GE(th)
V
on
off
ts
ies
oes
res
gc
g
ge
E
(BR)CES
2
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
CC
/ T
= 80%(V
/ T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage —
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 10 ,
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
18
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1900
T
U
0.44
2.05
1.90
0.11
0.23
0.34 0.45
0.85
2.36
100
170
124
140
7.5
13
28
—
98
12
36
27
22
74
25
23
35
—
—
—
—
—
—
Pulse width
Pulse width 5.0µs, single shot.
2500
±100
250
147
150
110
2.5
6.0
2.0
—
—
—
—
—
—
—
18
54
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
µA
nC
mJ
ns
mJ
nH
nA
ns
pF
V
V
V
S
80µs; duty factor
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10, 14
T
I
V
Energy losses include "tail"
See Fig. 10,11, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
C
CC
GE
GE
GE
GE
CC
C
C
=20A
= 20A, V
= 150°C,
= 20A, V
= 25°C
= 20A , T
= 20A
= 40A
= V
= 0V, I
= 0V, I
= 0V, I
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 0V
= 15V
= 30V
100 V, I
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
C
CE
CE
C
CC
CC
J
= 1.0mA
= 250µA
= 1.0A
= 150°C
= 250µA
= 250µA
G
G
C
= 600V
= 10V, T
= 600V, T
= 480V
= 480V
= 10
= 10
=20A
0.1%.
See Fig.8
See Fig. 7
J
www.irf.com
J
V
= 25°C
See Fig.2, 5
= 150°C
GE
= 15V