IXGT28N60B IXYS, IXGT28N60B Datasheet - Page 5
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IXGT28N60B
Manufacturer Part Number
IXGT28N60B
Description
IGBT 40A 600V TO-268
Manufacturer
IXYS
Datasheet
1.IXGH28N60B.pdf
(5 pages)
Specifications of IXGT28N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 28A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
28
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2
Tfi, Typ, Tj=25°c, Igbt, (ns)
200
Eoff, Typ, Tj=125°c, Igbt, (mj)
6
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
© 2003 IXYS All rights reserved
10000
1000
500
450
400
350
300
250
200
150
100
10
0.1
0.5
1
25
0
1
Fig. 13. Dependence of Sw itching
t
t
R
V
V
d(off)
fi
35
GE
CE
G
f = 1 MHz
5
-
= 10Ω
= 480V
= 15V
- - - - -
45
Fig. 15. Capacitance
Tim e on Tem perature
I
T
10
C
J
= 28A
55
- Degrees Centigrade
15
V
65
I
C E
C
= 14A
75
20
- Volts
85
Fig. 16. Maxim um Transient Therm al Resistance
I
25
C
= 56A
I
C
95
= 56A
C
C
C
30
ies
oes
res
105 115 125
10
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
V
I
I
C
G
CE
= 28A
= 1 0mA
10
= 300V
100
Fig. 14. Gate Charge
20
Q
G
- nanoCoulombs
30
40
IXGH 28N60B
IXGT 28N60B
50
60
1000
70