IRG4BC40WPBF International Rectifier, IRG4BC40WPBF Datasheet - Page 3
![IGBT WARP 600V 40A TO220AB](/photos/5/40/54079/to-220ab_sml.jpg)
IRG4BC40WPBF
Manufacturer Part Number
IRG4BC40WPBF
Description
IGBT WARP 600V 40A TO220AB
Manufacturer
International Rectifier
Specifications of IRG4BC40WPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC40WPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC40WPBF
Manufacturer:
SILICON
Quantity:
7 600
Company:
Part Number:
IRG4BC40WPBF
Manufacturer:
International Rectifier
Quantity:
135
www.irf.com
1000
100
10
1
50
40
30
20
10
1.0
0
0.1
Square wave:
V
CE
2.0
60% of rated
, Collector-to-Emitter Voltage (V)
Ideal diodes
voltage
T = 25 C
J
3.0
°
V
80µs PULSE WIDTH
1
GE
= 15V
T = 150 C
J
4.0
°
f, Frequency (kHz)
5.0
RMS
10
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 28W
1000
J
sink
100
10
1
= 90°C
5
T = 150 C
J
V
GE
T = 25 C
°
J
, Gate-to-Emitter Voltage (V)
100
7
°
Triangular wave:
Clamp voltage:
80% of rated
V
5µs PULSE WIDTH
CC
9
= 50V
1000
A
3
11