IRG4BC40WPBF International Rectifier, IRG4BC40WPBF Datasheet - Page 3
![IGBT WARP 600V 40A TO220AB](/photos/5/40/54079/to-220ab_sml.jpg)
IRG4BC40WPBF
Manufacturer Part Number
IRG4BC40WPBF
Description
IGBT WARP 600V 40A TO220AB
Manufacturer
International Rectifier
Specifications of IRG4BC40WPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC40WPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC40WPBF
Manufacturer:
SILICON
Quantity:
7 600
Company:
Part Number:
IRG4BC40WPBF
Manufacturer:
International Rectifier
Quantity:
135
www.irf.com
1000
100
10
Fig. 2 - Typical Output Characteristics
1
5 0
4 0
3 0
2 0
1 0
1.0
0
0.1
S q u a re w ave :
V
CE
2.0
6 0 % o f ra te d
, Collector-to-Emitter Voltage (V)
Id e a l d io de s
v o lt a g e
T = 25 C
J
3.0
°
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
1
GE
= 15V
T = 150 C
(Load Current = I
J
4.0
°
f, Frequency (kHz)
5.0
RMS
1 0
of fundamental)
F o r b o t h :
D u ty cy c le : 5 0 %
T = 12 5° C
T
G at e d rive as sp ec ifie d
P o w e r D is s ip a tio n = 2 8 W
1000
J
s in k
100
Fig. 3 - Typical Transfer Characteristics
10
1
= 9 0 °C
5
T = 150 C
J
V
GE
T = 25 C
°
J
, Gate-to-Emitter Voltage (V)
1 0 0
IRG4BC40W
7
°
Tria n g u la r w a ve :
C la m p vo l ta g e :
8 0 % o f r a te d
V
5µs PULSE WIDTH
CC
9
= 50V
1 0 0 0
A
3
11