IXGH72N60B3 IXYS, IXGH72N60B3 Datasheet - Page 6

no-image

IXGH72N60B3

Manufacturer Part Number
IXGH72N60B3
Description
IGBT 600V TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH72N60B3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 60A
Current - Collector (ic) (max)
75A
Power - Max
540W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
72
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.80
Tfi, Typ, Tj=25°c, Igbt, (ns)
90
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.20
Rthjc, Max, Igbt, (°c/w)
0.23
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
170
150
130
110
90
80
70
60
50
40
30
20
10
90
70
50
30
10
0
25
0
Switching Times vs. Junction Temperature
t
T
V
35
r
Switching Times vs. Gate Resistance
J
CE
5
= 125ºC, V
I
= 480V
C
10
= 100A
45
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
T
15
J
t
55
d(on)
I
GE
- Degrees Centigrade
C
= 25A
= 15V
20
- - - -
I
R
65
C
I
I
G
C
= 100A
C
= 50A
- Ohms
25
= 25A
I
75
C
= 50A
30
t
R
V
85
r
CE
G
35
= 3
= 480V
95
, V
40
t
d(on
GE
105
45
= 15V
)
- - - -
115
50
125
55
140
125
110
95
80
65
50
35
20
35
34
33
32
31
30
29
28
27
26
25
90
80
70
60
50
40
30
20
10
20
t
R
V
Switching Times vs. Collector Current
r
G
CE
= 3Ω , V
30
= 480V
T
J
= 25ºC, 125ºC
Fig. 19. Inductive Turn-on
t
40
d(on)
GE
= 15V
- - - -
I
50
C
- Amperes
60
70
25ºC < T
IXGT72N60B3
IXGH72N60B3
80
J
< 125ºC
IXYS REF: G_72N60B3(76)02-10-09-D
90
100
34
33
32
31
30
29
28
27
26

Related parts for IXGH72N60B3