IXGH50N60C2 IXYS, IXGH50N60C2 Datasheet - Page 3

• Manufacturer Part Number: IXGH50N60C2
• Description: IGBT 600V 75A TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH50N60C2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 48
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.74
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.8
4.5
4.2
3.9
3.6
3.3
2.7
2.4
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
3
0.5
0.5
5
Fig. 5. Collector-to-Em itter Voltage
6
Fig. 3. Output Characteristics
1
1
Fig. 1. Output Characte ristics
vs. Gate-to-Em itter voltage
7
V
GE
8
1.5
1.5
= 15V
I
13V
11V
C
9
@ 125 Deg. C
V
= 80A
@ 25 Deg. C
V
C E
V
V
40A
20A
GE
10 11 12 13 14 15 16 17
G E
CE
2
2
- Volts
= 15V
- Volts
- Volts
13V
11V
2.5
2.5
9V
T
3
3
J
7V
6V
5V
= 25ºC
9V
3.5
3.5
5V
7V
6V
4
4
320
280
240
200
160
120
200
180
160
140
120
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
40
80
60
40
20
0
0
Fig. 2. Extended Output Characte ristics
25
0
4
V
4.5
Fig. 4. De pende nce of V
T
1
GE
J
Fig. 6. Input Adm ittance
= 125ºC
V
= 15V
50
25ºC
GE
2
5
T
= 15V
I
C
J
5.5
13V
3
= 20A
- Degrees Centigrade
Tem perature
@ 25 de g. C
V
75
V
4
6
G E
C E
I
C
6.5
- Volts
= 40A
5
- Volts
IXGH 50N60C2
IXGT 50N60C2
100
6
7
I
C
11V
9V
7V
5V
= 80A
7.5
CE(sat)
7
125
8
8
on
8.5
9
150
10
9