IXGH50N60B2 IXYS, IXGH50N60B2 Datasheet
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Manufacturer Part Number
IXGH50N60B2
Description
IGBT 600V 75A TO-247
Specifications of IXGH50N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
400W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
2
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.55
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFAST
B2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
GEM
C
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
© 2004 IXYS All rights reserved
d
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @
T
Mounting torque (TO-247)
Test Conditions
I
V
V
V
I
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 40 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
CES
GE
TM
VJ
GE
= 15 V
CE
= 125°C, R
= ±20 V
= V
IGBT
GE
GE
= 1 MΩ
G
≤
= 10 Ω
T
T
T
600V
(T
J
J
J
= 25°C
= 150°C
= 125°C
J
= 25°C, unless otherwise specified)
TO-247 AD
TO-268
IXGH 50N60B2
IXGT 50N60B2
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.6
1.5
1.13/10Nm/lb.in.
I
CM
200
600
600
±20
±30
= 80
400
150
300
75
50
max.
±100
4
6
5.0
2.0
50
1
mA
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
V
V
TO-247
TO-268
G = Gate,
E = Emitter,
Features
Applications
Advantages
(IXGH)
(IXGT)
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
=
=
E
DS99145A(03/04)
2.0 V
75 A
65 ns
C (TAB)
C (TAB)
Related parts for IXGH50N60B2
IXGH50N60B2 Summary of contents
... I = 250 µ GE(th CES CE CES ± GES CE(sat © 2004 IXYS All rights reserved IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω ≤ 600V 400 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 AD TO-268 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3 80A C 2.8 40A 20A 2.5 2.2 1.9 1.6 1 Volts G E © 2004 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 320 9V 280 240 7V 200 160 120 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1 ...
... GE 500 V = 480V 40A 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4.5 3.5 2.5 1.5 0.5 C 3.5 2.5 1 25º 400 350 ...
... 40A 10mA nanoCoulombs G 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved 20A C = 40A 105 115 125 10000 1000 100 10 90 120 150 Fig. 17. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 50N60B2 IXGT 50N60B2 Fig. 14. Reverse -Bias Safe Operating Are a º ...
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