IXGH32N100A3 IXYS, IXGH32N100A3 Datasheet - Page 2
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IXGH32N100A3
Manufacturer Part Number
IXGH32N100A3
Description
IGBT 75A 1000V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGH32N100A3.pdf
(2 pages)
Specifications of IXGH32N100A3
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 32A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
540
Eoff, Typ, Tj=125°c, Igbt, (mj)
13
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
ri
fi
ri
fi
d(on)
d(off)
d(on)
d(off)
fs
on
off
on
off
ies
oes
res
thJC
thCS
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C unless otherwise specified)
I
V
I
TO-247
Inductive Load, T
I
V
Inductive Load, T
I
V
C
C
C
C
CE
= 32A, V
= 32A, V
CE
CE
= 32A, V
= 32A, V
Test Conditions
= 25V, V
= 800V, R
= 800V, R
ADVANCE TECHNICAL INFORMATION
CE
GE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 10Ω
= 10Ω
J
J
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
14
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2250
0.21
385
400
770
130
2.6
540
4.2
13
20
48
87
16
35
24
51
9.5
52
23
0.42 °C/W
Max.
700
800
14
6,404,065 B1
6,534,343
6,583,505
°C/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
mJ
ns
ns
ns
ns
ns
ns
ns
ns
S
6,683,344
6,710,405 B2
6,710,463
TO-247 (IXGH) Outline
Terminals: 1 - Gate
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
6,727,585
6,759,692
6,771,478 B2 7,071,537
1
2
1
2
20.80
15.75
19.81
3 - Emitter
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
IXGH32N100A3
IXGT32N100A3
4.7
2.2
2.2
1.0
Millimeter
.4
7,005,734 B2 7,157,338B2
7,063,975 B2
21.46
16.26
20.32
BSC
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216