IXGH60N60C3 IXYS, IXGH60N60C3 Datasheet - Page 5

• Manufacturer Part Number: IXGH60N60C3
• Description: IGBT 75A 600V TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH60N60C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 50
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.8
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
180
160
140
120
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
25
25
2
Energy Loss vs. Junction Temperature
Switching Times vs. Collector Current
E
R
V
E
T
V
30
off
CE
35
J
G
off
CE
4
= 125ºC , V
Energy Loss vs. Gate Resistance
= 3 Ω
= 480V
= 480V
35
I
I
Fig. 12. Inductive Switching
Fig. 14. Inductive Switching
45
C
C
Fig. 16. Inductive Turn-off
,
6
= 80A
= 40A
V
T
40
E
GE
J
on
55
E
GE
- Degrees Centigrade
= 15V
on
8
- - - -
45
= 15V
- - - -
R
I
65
C
G
10
- Amperes
- Ohms
50
75
55
12
I
t
R
V
C
f
CE
G
85
= 40A
= 3 Ω , V
60
= 480V
14
T
J
95
65
= 125ºC
I
t
C
16
GE
d(off)
T
= 80A
105
70
J
= 15V
= 25ºC
- - - -
18
75
115
80
20
125
130
120
110
100
90
80
70
60
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
160
150
140
130
120
110
100
90
80
70
60
50
40
160
150
140
130
120
110
100
90
80
25
25
Switching Times vs. Junction Temperature
T
2
J
E
V
= 125ºC, 25ºC
t
R
V
R
30
off
CE
Switching Times vs. Gate Resistance
f
G
CE
G
35
= 3 Ω , V
Energy Loss vs. Collector Current
= 3
= 480V
4
= 480V
35
Ω ,
45
Fig. 13. Inductive Switching
Fig. 17. Inductive Turn-off
Fig. 15. Inductive Turn-off
6
T
V
40
t
GE
E
GE
d(off)
J
55
on
- Degrees Centigrade
= 15V
= 15V
- - - -
45
I
8
C
- - - -
65
- Amperes
I
t
T
V
C
R
f
J
50
CE
= 80A
10
G
= 125ºC,
- Ohms
= 480V
75
55
I
12
C
85
= 40A
V
60
I
t
d(off)
GE
C
14
IXGH60N60C3
= 80A
= 15V
95
65
- - - -
16
105
70
I
C
18
115
= 40A
75
20
125
80
380
340
300
260
220
180
140
100
60
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
120
115
110
105
100
95
90
85
80
75
70
65
60