IRG4PH40KDPBF International Rectifier, IRG4PH40KDPBF Datasheet - Page 3

IGBT W/DIODE 1200V 30A TO247AC

IRG4PH40KDPBF

Manufacturer Part Number
IRG4PH40KDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PH40KDPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
1600 pF
Current, Collector
30 A
Energy Rating
2.43 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
4 to 20 kHz
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.29 V
Transistor Type
IGBT
Dc Collector Current
30A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
30
Ic @ 100c (a)
15
Vce(on)@25c Typ (v)
2.74
Vce(on)@25c Max (v)
3.40
Ets Typ (mj)
2.43
Ets Max (mj)
2.8
Qrr Typ Nc 25c
140
Qrr Max Nc 25c
380
Vf Typ
2.60
Pd @25c (w)
160
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4PH40KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40KDPBF
Manufacturer:
EXAR
Quantity:
340
www.irf.com
100
10
Fig. 2 - Typical Output Characteristics
25
20
15
10
1
5
0
0.1
1
S q u a re w a v e :
V

T = 150 C
CE
J
, Collector-to-Emitter Voltage (V)
6 0% of rate d
Id e a l d io d e s
I
°
volta ge

T = 25 C
J

Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
°
GE
= 15V
(Load Current = I
1
10
f, Frequency (KHz)
RMS
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
1
4
V

T = 150 C
GE
J
6
10
, Gate-to-Emitter Voltage (V)
IRG4PH40KD
°
8

T = 25 C
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
J
J
s ink

= 90°C
V
5µs PULSE WIDTH
10
°
CC
= 50V
12
35
W
100
14
3

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