IXDP20N60BD1 IXYS, IXDP20N60BD1 Datasheet - Page 4
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IXDP20N60BD1
Manufacturer Part Number
IXDP20N60BD1
Description
IGBT 600V 32A W/DIODE TO-220AB
Manufacturer
IXYS
Datasheet
1.IXDP20N60B.pdf
(4 pages)
Specifications of IXDP20N60BD1
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 20A
Current - Collector (ic) (max)
32A
Power - Max
140W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
32A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
32
Ic90, Tc=90°c, Igbt, (a)
20
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.4
Rthjc, Max, Igbt, (°c/w)
0.90
If, Tc=90°c, Diode, (a)
15
Rthjc, Max, Diode, (k/w)
2.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXDP20N60BD1
Manufacturer:
IXYS
Quantity:
18 000
© 2002 IXYS All rights reserved
E
E
I
CM
on
on
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
mJ
mJ
80
60
40
20
A
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
R
T
V
V
R
T
J
t
J
t
G
CE
GE
G
d(on)
r
100 200 300 400 500 600 700
= 22
= 125°C
= 125°C
= 22
= 300V
= ±15V
10
W
W
times versus collector current
times versus gate resistor
RBSOA
10
20
30
20
40
R
I
G
C
50
V
V
I
T
E
C
J
CE
GE
V
on
= 125°C
= 20A
CE
= 300V
= ±15V
30
60
E
t
t
d(on)
r
on
A
W
V
70
75
50
25
0
40
ns
30
20
10
0
ns
t
t
Z
E
E
thJC
off
off
0.001
1.00
0.75
0.50
0.25
0.00
0.01
K/W
0.8
0.6
0.4
0.2
0.0
mJ
0.1
mJ
5
1
10
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
-5
V
V
I
T
C
J
CE
GE
= 125°C
= 20A
= 300V
= ±15V
10
10
-4
single pulse
times versus collector current
times versus gate resistor
10
20
10
-3
30
10
IXDP 20N60 B
IXDP 20N60 BD1
-2
20
40
t
t
E
R
d(off)
f
10
off
G
I
-1
50
C
t
V
V
R
T
CE
GE
J
G
10
= 125°C
= 300V
= ±15V
= 22
30
60
0
IXDP20N06B
diode
IGBT
W
A
t
E
s
W
d(off)
off
t
f
10
70
400
300
200
100
0
1
ns
800
ns
600
400
200
0
4 - 4
t
t