IXGH30N60C2D1 IXYS, IXGH30N60C2D1 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH30N60C2D1
Manufacturer Part Number
IXGH30N60C2D1
Description
IGBT 600V 70A FRD TO-247
Specifications of IXGH30N60C2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
32
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.4
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
30
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH30N60C2D1
HiPerFAST
with Diode
C2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
M
Weight
Symbol
V
I
I
V
CM
C25
C110
CES
GES
J
JM
stg
GEM
C
GE(th)
CE(sat)
CES
CGR
GES
© 2005 IXYS All rights reserved
d
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
I
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 24 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
T
J
J
J
J
(T
= 25°C
= 125°C
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXGH 30N60C2D1
IXGT 30N60C2D1
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.8
1.13/10Nm/lb.in.
I
CM
150
600
600
±20
±30
= 60
190
250
150
300
70
30
max.
±100
5.0
6
4
200
2.7
3
V
mA
nA
°C
µA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 AD (IXGH)
TO-268 (IXGT)
G = Gate,
E = Emitter,
Features
Applications
Advantages
Very high frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speed for high
frequency aaplications
High power surface mountable
package
V
I
V
t
C25
fi typ
CES
CE(sat)
G
G
C
E
E
C = Collector,
TAB = Collector
= 600 V
=
=
=
DS99169A(01/05)
2.7 V
70 A
32 ns
C (TAB)
C (TAB)
Related parts for IXGH30N60C2D1
IXGH30N60C2D1 Summary of contents
... GE(th CES CES ± GES CE(sat) © 2005 IXYS All rights reserved IXGH 30N60C2D1 IXGT 30N60C2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 150 = 10 Ω 190 -55 ... +150 150 -55 ... +150 300 250 1.13/10Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
... V, - 100 -di/dt = 100 A/µ thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max ...
... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4 48A C 4 24A 12A 3 Volts G E © 2005 IXYS All rights reserved 270 240 9V 210 180 150 7V 120 2.5 3 3.5 1.2 9V 1.1 1.0 7V 0.9 0.8 0.7 5V 0.6 0.5 2 ...
Fig. 7. Transconductance 25ºC J 125º 100 120 140 160 180 200 I - Amperes C Fig. 9. Dependence of Turn-Off Energy ...
... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.5 0.1 1 © 2005 IXYS All rights reserved 12A C 3 24A 48A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 30N60C2D1 IXGT 30N60C2D1 Fig ...
=150° =100° =25° Fig. 17. Forward current I versus V F 2.0 1 1.0 I ...
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