IRG4BC30WPBF International Rectifier, IRG4BC30WPBF Datasheet - Page 3

IGBT WARP 600V 23A TO220AB

IRG4BC30WPBF

Manufacturer Part Number
IRG4BC30WPBF
Description
IGBT WARP 600V 23A TO220AB
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC30WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 12A
Current - Collector (ic) (max)
23A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
23A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
23A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4BC30WPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC30WPBF
Manufacturer:
FUJI
Quantity:
5 000
www.irf.com
100
10
40
30
20
10
1
0
0.1
1
T = 150 C
J
Square wave:
V
CE
60% of rated
°
, Collector-to-Emitter Voltage (V)
Ideal diodes
voltage
T = 25 C
J
°
V
20µs PULSE WIDTH
GE
= 15V
1
RMS
f, Frequency (kHz)
10
100
0.1
10
1
5.0
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 21W
J
sink
T = 150 C
J
IRG4BC30WPbF
= 90°C
6.0
V
GE
10
°
, Gate-to-Emitter Voltage (V)
7.0
T = 25 C
J
PK
°
8.0
Triangular wave:
V
5µs PULSE WIDTH
CC
9.0
Clamp voltage:
80% of rated
= 50V
10.0
3
11.0
100
A

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