IXGH32N90B2 IXYS, IXGH32N90B2 Datasheet - Page 4
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IXGH32N90B2
Manufacturer Part Number
IXGH32N90B2
Description
IGBT 900V 64A TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH32N90B2.pdf
(7 pages)
Specifications of IXGH32N90B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 32A
Current - Collector (ic) (max)
64A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Channel Type
N
Configuration
Single
Collector-emitter Voltage
900V
Collector Current (dc) (max)
64A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
64
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.25
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH32N90B2
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXGH32N90B2D1
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
0.01
100
0.1
35
30
25
20
15
10
10
5
0
1
0.1
0
0
f = 1 MHz
Fig. 7. Transconductance
5
20
Fig. 9. Capacitance
10
T
J
=
1 25
-40
25
I
15
V
C
º
40
º
º
C
C E
C
C
- Amperes
- Volts
20
60
Fig. 11. Maxim um Transient Therm al Resistance
1
C
C
C
25
oes
ies
res
30
80
35
Pulse Width - milliseconds
100
40
10
16
14
12
10
70
60
50
40
30
20
10
8
6
4
2
0
0
100
0
V
I
I
C
G
CE
10
200
= 32A
= 1 0mA
T
R
dV/dT < 10V/ns
Fig. 10. Reverse-Bias Safe
J
G
= 450V
= 125
20
= 10Ω
Fig. 8. Gate Charge
300
Operating Area
Q
º
30
C
G
400
- nanoCoulombs
V
40
100
C E
500
- Volts
50
IXGH 32N90B2
IXGT 32N90B2
60
600
70
700
80
800
90
1000
100
900