IXGT30N60B2 IXYS, IXGT30N60B2 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGT30N60B2
Manufacturer Part Number
IXGT30N60B2
Description
IGBT 600V 70A TO-268
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH30N60B2.pdf
(5 pages)
Specifications of IXGT30N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
10000
1000
100
220
200
180
160
140
120
100
10
1.0
0.1
80
0.5
25
0
1
t
t
R
V
V
d(off)
fi
Sw itching Tim e on Tem perature
GE
CE
35
Fig. 13. Dependence of Turn-Off
G
f = 1 MHz
-
5
= 5Ω
= 400V
= 15V
- - - - -
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
15
V
65
I
C E
C
= 12A
20
- Volts
24A
48A
75
85
25
Fig. 16. Maxim um Transient Therm al Resistance
95
30
C
C
C
105 115 125
ies
oes
res
I
10
C
= 48A
35
24A
12A
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
V
I
I
C
G
CE
10
= 24A
= 10mA
= 300V
100
Fig. 14. Gate Charge
20
Q
G
- nanoCoulombs
30
40
IXGH 30N60B2
IXGT 30N60B2
50
60
1000
70