IXGC16N60C2D1 IXYS, IXGC16N60C2D1 Datasheet
IXGC16N60C2D1
Manufacturer Part Number
IXGC16N60C2D1
Description
IGBT FAST B2 600V 20A ISOPLUS220
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGC16N60C2.pdf
(2 pages)
Specifications of IXGC16N60C2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 12A
Current - Collector (ic) (max)
20A
Power - Max
63W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Ic90, Tc=90°c, Igbt, (a)
-
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
C2-Class High Speed
IGBT in ISOPLUS220
Electrically Isolated Back Surface
Symbol
V
I
I
V
© 2004 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
F
V
Weight
Preliminary Data Sheet
GES
CES
CM
C25
C110
D110
C
GE(th)
CE(sat)
JM
GEM
J
stg
CES
CGR
GES
C
ISOL
Test Conditions
I
V
V
V
I
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load
T
Mounting Force
Isolation Voltage; 50/60Hz; t = 1minute; RMS
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
C
C
CE
GE
CE
C
C
C
C
C
J
J
GE
= 12 A
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 110°C (IXGC16N60C2D1 diode)
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
TM
CES
,
V
IGBT
GE
GE
J
= 15 V
CE
= 125°C, R
= ±20 V
= V
GE
GE
TM
G
= 1 MΩ
= 22 Ω
16N60C2
16N60C2D1
T
(T
Case
J
=125°C
J
= 25°C, unless otherwise specified)
IXGC 16N60C2
IXGC 16N60C2D1
min.
2.5
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
typ.
2.7
2.1
I
CM
2500
= 32
600
600
±20
±30
100
150
300
20
10
CES
63
max.
8
2
±100
5.0
3.0
25
50
D1
N/lb.
µA
µA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
A
V
g
V
I
V
t
ISOPLUS 220
G = Gate
E = Emitter
Features
Applications
Advantages
C25
fi(typ)
DCB Isolated mounting tab
UL recognized (E153432)
Meets TO-273 package Outline
High current handling capability
MOS Gate turn-on
- drive simplicity
Epoxy meets UL94V-0 flammability
classification
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
CES
CE(sat)
G
C
E153432
E
TM
= 600 V
=
=
= 3.0 V
Isolated back surface*
C = Collector
(IXGC)
20 A
35 ns
DS99149A(11/04)
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IXGC16N60C2D1 Summary of contents
Page 1
... Preliminary Data Sheet Symbol Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR J V Continuous GES V Transient GEM 25°C C25 110°C C110 110°C (IXGC16N60C2D1 diode) D110 25° SSOA 125° (RBSOA) Clamped inductive load 25° stg F Mounting Force C V Isolation Voltage ...
Page 2
... Notes: 1. Switching times may increase for V or increased Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 ...